Cu-Doped nickel oxide prepared using a low-temperature combustion method as a hole-injection layer for high-performance OLEDs

Li, Yi-Huan; Lu, Xun; Wang, Rongbin; Ma, Yuechao; Duhm, Steffen; Fung, Man‐Keung

doi:10.1039/c7tc03884d

Cited by 37 publications

(21 citation statements)

References 35 publications

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“…The process of metal-doping of the electrochromic oxide shows high-performance and reliability has been proposed on tungsten trioxide (WO 3 ) and nickel oxide (NiO) film [11,12]. The chromic mixed metal oxide films often show more natural colors than intrinsic ones in their coloring states.…”

Section: Introductionmentioning

confidence: 99%

Electrochromic Properties of the Vanadium Pentoxide Doped with Nickel as an Ionic Storage Layer

Lin

Jheng²,

Huang

2021

Energies

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The electrochromic property of nickel doped vanadium pentoxide (V2O5) deposited by a co-sputtering system is investigated. The structural analysis of the thin film was done by an X-ray diffraction (XRD) analyzer. The surface morphology of the film was studied by a field emission scanning electron microscopy (FE-SEM). The composition of the film was detected by an Auger analysis. The electrochromic properties of the device were measured by cyclic voltammetry. For the undoped V2O5 thin film, the charge storage capacity increases with the thickness and is 42.58 mC/cm2 at the thickness of 192.4 nm after 2 h deposition. For the Ni-doped V2O5, the Ni-V-O film shows V2O5 structural dominate with cathode coloration in the lower Ni deposition power region and the charge storage capacity decreases with the increases of the power, while the Ni-V-O film transfers to NiO structural dominate with anodic coloration at the realm of higher Ni doping. The charge storage capacity increases with the increase of Ni doping. It can reach to 101.35 mC/cm2. The Ni-V-O electrochromic film shows improvement of transmittance difference between colored and bleached values and improvement of charge store capacity as it is compared to pure V2O5 films.

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Section: Introductionmentioning

confidence: 99%

Electrochromic Properties of the Vanadium Pentoxide Doped with Nickel as an Ionic Storage Layer

Lin

Jheng²,

Huang

2021

Energies

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“…Ao Liu et al demonstrated the solution combustion synthesis fabrication of optimized 5% Cu doped NiO x films for use in TFT applications, exhibiting excellent electrical performance [49]. Yi-Huan Li et al applied a 300 • C annealing temperature for the solution combustion synthesis of Cu:NiO x , showing that it can be used as an efficient hole injection layer for the fabrication of high performing OLEDs [50]. Thus, solution combustion synthesis metal oxide thin films have emerged as a facile method for the fabrication of functional metal oxide-based charge selective contacts for electronic applications.…”

Section: Introductionmentioning

confidence: 99%

“…Specifically, the reported results investigate the effect of the thermal annealing temperature (150, 200, and 300 • C) as well as the fuel (acetyl acetonate (Acac)) to oxidizer (Cu and Ni nitrates) ratio (without (w/o), 0.1 and 1.5) in the combustion synthesis process of Cu:NiO x . The study is performed at Cu:NiO x filmswith various final thicknesses (50,200, 300 nm) and for drop-casted bulk Cu:NiO x analogues (with thickness in the range of a few microns). The crystal growth process is studied by performing thermogravimetric analysis (TGA) and the crystallinity of the corresponding Cu:NiO x materials is examined by X-ray diffraction (XRD).…”

Section: Introductionmentioning

confidence: 99%

Thermal Analysis of Metal-Organic Precursors for Functional Cu:ΝiOx Hole Transporting Layer in Inverted Perovskite Solar Cells: Role of Solution Combustion Chemistry in Cu:ΝiOx Thin Films Processing

et al. 2021

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Low temperature solution combustion synthesis emerges as a facile method for the synthesis of functional metal oxides thin films for electronic applications. We study the solution combustion synthesis process of Cu:NiOx using different molar ratios (w/o, 0.1 and 1.5) of fuel acetylacetone (Acac) to oxidizer (Cu, Ni Nitrates) as a function of thermal annealing temperatures 150, 200, and 300 °C. The solution combustion synthesis process, in both thin films and bulk Cu:NiOx, is investigated. Thermal analysis studies using TGA and DTA reveal that the Cu:NiOx thin films show a more gradual mass loss while the bulk Cu:NiOx exhibits a distinct combustion process. The thin films can crystallize to Cu:NiOx at an annealing temperature of 300 °C, irrespective of the Acac/Oxidizer ratio, whereas lower annealing temperatures (150 and 200 °C) produce amorphous materials. A detail characterization study of solution combustion synthesized Cu:NiOx, including XPS, UV-Vis, AFM, and Contact angle measurements, is presented. Finally, 50 nm Cu:NiOx thin films are introduced as HTLs within the inverted perovskite solar cell device architecture. The Cu:NiOx HTL annealed at 150 and 200 °C provided PVSCs with limited functionality, whereas efficient triple-cation Cs0.04(MA0.17FA0.83)0.96 Pb(I0.83Br0.17)3-based PVSCs achieved for Cu:NiOx HTLs for annealing temperature of 300 °C.

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“…In this report, we propose that the use of suitable Ni-containing solution-processed (SCS) MO interfacial layer between ITO and PEDOT:PSS can be used as a method to improve the properties of the bottom electrode (ITO/MO/PEDOT:PSS). Un-doped spinel nickel cobaltite (NiCo 2 O 4 ) and co-doped with 3% Cu and 2% Li [(Cu-Li):NiCo 2 O 4 ] [ 28 , 29 ] as well as Cu:NiO x and CuO x [ 30 , 31 , 32 ] were used as MOs investigated in the current work. We show that Ni-containing MOs interface modification ITO/MO/PEDOT:PSS improved device performance in normal structure fluorescent super-yellow (SY) OLED devices, in comparison to reference ITO/PEDOT:PSS bottom electrode.…”

Section: Introductionmentioning

confidence: 99%

Bottom Contact Metal Oxide Interface Modification Improving the Efficiency of Organic Light Emitting Diodes

et al. 2020

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The performance of solution-processed organic light emitting diodes (OLEDs) is often limited by non-uniform contacts. In this work, we introduce Ni-containing solution-processed metal oxide (MO) interfacial layers inserted between indium tin oxide (ITO) and poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) to improve the bottom electrode contact for OLEDs using the poly(p-phenylene vinylene) (PPV) derivative Super-Yellow (SY) as an emission layer. For ITO/Ni-containing MO/PEDOT:PSS bottom electrode structures we show enhanced wetting properties that result in an improved OLED device efficiency. Best performance is achieved using a Cu-Li co-doped spinel nickel cobaltite [(Cu-Li):NiCo2O4], for which the current efficiency and luminous efficacy of SY OLEDs increased, respectively, by 12% and 11% from the values obtained for standard devices without a Ni-containing MO interface modification between ITO and PEDOT:PSS. The enhanced performance was attributed to the improved morphology of PEDOT:PSS, which consequently increased the hole injection capability of the optimized ITO/(Cu-Li):NiCo2O4/PEDOT:PSS electrode.

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Cu-Doped nickel oxide prepared using a low-temperature combustion method as a hole-injection layer for high-performance OLEDs

Abstract: Low-temperature combustion methods to deposit s-NiOx and s-Cu-NiOx on ITO glass to fabricate efficient green phosphorescent OLEDs.

Cited by 37 publications

References 35 publications

Electrochromic Properties of the Vanadium Pentoxide Doped with Nickel as an Ionic Storage Layer

Electrochromic Properties of the Vanadium Pentoxide Doped with Nickel as an Ionic Storage Layer

Thermal Analysis of Metal-Organic Precursors for Functional Cu:ΝiOx Hole Transporting Layer in Inverted Perovskite Solar Cells: Role of Solution Combustion Chemistry in Cu:ΝiOx Thin Films Processing

Bottom Contact Metal Oxide Interface Modification Improving the Efficiency of Organic Light Emitting Diodes

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