Cu cone inserted CBRAM device fabrication and its improved switching reliability induced by field concentration effect

Kim, Hae Jin; Park, Tae Hyung; Yoon, Kyung Jean; Kim, Gil Seop; Ha, Tae Jung; Kim, Soo Gil; Hwang, Cheol Seong

doi:10.1109/edtm.2018.8421459

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) 2018

DOI: 10.1109/edtm.2018.8421459

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Cu cone inserted CBRAM device fabrication and its improved switching reliability induced by field concentration effect

Hae Jin Kim

Tae Hyung Park

Kyung Jean Yoon

et al.

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Cu cone inserted CBRAM device fabrication and its improved switching reliability induced by field concentration effect

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