Cu and Cu(Mn) films deposited layer-by-layer via surface-limited redox replacement and underpotential deposition

Fang, Jau–Shiung; Sun, Shou-bin; Cheng, Yi-Lung; Chen, G.S.; Chin, Tsung‐Shune

doi:10.1016/j.apsusc.2015.12.161

Cited by 12 publications

(7 citation statements)

References 47 publications

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“…Annealing can cause a decrease in the electrical resistivity of Cu(Mn) films, in particular for the film with 60 s OCP, which will be discussed in the following section. The electrical resistivity of the as-deposited Cu(Mn) film in this study is consistent with the previously obtained values from the literature, depending on the Mn concentration and the deposition technique that was used [19,33,34]. Figure 7 shows the changes in electrical resistivity for the annealed Cu(Mn) films that were deposited at the respective terminated OCP time.…”

Section: Ocp (S)supporting

confidence: 89%

“…As mentioned, the Cu(Mn) film, deposited in an electrochemical manner, is rare. Our previous study has shown that the lowest electrical resistivities of 44.4 µΩ•cm for the as-deposited Cu(Mn) film that was electrochemically deposited resulted in an Mn concentration at approximately 10.0 at.% [19]. Annealing can cause a decrease in the electrical resistivity of Cu(Mn) films, in particular for the film with 60 s OCP, which will be discussed in the following section.…”

Section: Ocp (S)mentioning

confidence: 90%

“…The Cu(Mn) film can also be successfully electrochemically deposited through controlling the OCP time during the Cu-SLRR. This process can use the sequence of surface-limited redox replacement (SLRR) of Cu to replace the sacrificial underpotentially-deposited (UPD) Pb and insert an UPD-Mn [19]. Table 2 also shows the electrical resistivity vs. respective terminated OCP time for the as-deposited Cu(Mn) films.…”

Section: Ocp (S)mentioning

confidence: 99%

See 2 more Smart Citations

A New Alternative Electrochemical Process for a Pre-Deposited UPD-Mn Mediated the Growth of Cu(Mn) Film by Controlling the Time during the Cu-SLRR

et al. 2020

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A layer-by-layer deposition is essential for fabricating the Cu interconnects in a nanoscale-sized microelectronics because the gap-filling capability limits the film deposition step coverage on trenches/vias. Conventional layer-by-layer electrochemical deposition of Cu typically works by using two electrolytes, i.e., a sacrificial Pb electrolyte and a Cu electrolyte. However, the use of a Pb electrolyte is known to cause environmental issues. This study presents an Mn monolayer, which mediated the electrochemical growth of Cu(Mn) film through a sequence of alternating an underpotential deposition (UPD) of Mn, replacing the conventionally used UPD-Pb, with a surface-limited redox replacement (SLRR) of Cu. The use of the sacrificial Mn monolayer uniquely provides redox replacement by Cu2+ owing to the standard reductive potential differences. Repeating the sequence of the UPD-Mn followed by the SLRR-Cu enables Cu(Mn) film growth in an atomic layer growth manner. Further, controlling the time of open circuit potential (OCP) during the Cu-SLRR yields a technique to control the content of the resultant Cu(Mn) film. A longer OCP time caused more replacement of the UPD-Mn by the Cu2+, thus resulting in a Cu(Mn) film with a higher Cu concentration. The proposed layer-by-layer growth method offers a wet, chemistry-based deposition capable of fabricating Cu interconnects without the use of the barrier layer and can be of interest in microelectronics.

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Section: Ocp (S)supporting

confidence: 89%

Section: Ocp (S)mentioning

confidence: 90%

Section: Ocp (S)mentioning

confidence: 99%

See 1 more Smart Citation

A New Alternative Electrochemical Process for a Pre-Deposited UPD-Mn Mediated the Growth of Cu(Mn) Film by Controlling the Time during the Cu-SLRR

et al. 2020

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“…[23] Galvanic displacement allowing to obtain ultrathin layers is known as "surface limited redox displacement". [13,[24][25][26][27][28] Along with all these applications, galvanic displacement reaction can lead to undesired processes. For example, the spontaneous degradation of magnesium-ion battery anodes can be caused by these reactions.…”

Section: Introductionmentioning

confidence: 99%

“…Metal nanostructures fabricated via galvanic displacement are used in production of catalysts, [11–21] sensors, [8,9,22] lithium‐ion batteries [23] . Galvanic displacement allowing to obtain ultrathin layers is known as “surface limited redox displacement” [13,24–28] …”

Section: Introductionmentioning

confidence: 99%

Nonlinear Potential Scanning as a Novel Approach to Calculation of the Time Variable Galvanic Displacement Reaction Rate

Patsay

Maizelis

2022

ChemElectroChem

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A novel approach to estimate the rate of galvanic displacement reaction was proposed, which allowed the most accurate calculation of the displacement process rate at each moment of time by exact reproducing the open‐circuit conditions. We applied the method for mild steel samples immersed in pyrophosphate‐citrate electrolyte for Cu−Zn alloy electrodeposition. The time dependences of parameters of steel‐electrolyte interaction are obtained. The rate of steel dissolution in open circuit conditions increases by 1.6–2.9 times as compared with corrosion in pyrophosphate‐citrate medium. The results of our approach were verified by an independent experiment using anodic stripping of the obtained deposits.

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Efficiently Improved Corrosion Resistance of Electrodeposition Ni–Cu Coatings via Site‐Blocking Effect of Ce

Zhang

Meng

et al. 2022

Adv Eng Mater

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Cu and Cu(Mn) films deposited layer-by-layer via surface-limited redox replacement and underpotential deposition

Cited by 12 publications

References 47 publications

A New Alternative Electrochemical Process for a Pre-Deposited UPD-Mn Mediated the Growth of Cu(Mn) Film by Controlling the Time during the Cu-SLRR

A New Alternative Electrochemical Process for a Pre-Deposited UPD-Mn Mediated the Growth of Cu(Mn) Film by Controlling the Time during the Cu-SLRR

Nonlinear Potential Scanning as a Novel Approach to Calculation of the Time Variable Galvanic Displacement Reaction Rate

Efficiently Improved Corrosion Resistance of Electrodeposition Ni–Cu Coatings via Site‐Blocking Effect of Ce

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