2022
DOI: 10.1088/1361-6528/ac7ed2
|View full text |Cite
|
Sign up to set email alerts
|

Cs4CuSb2Cl12−x I x (x = 0–10) nanocrystals for visible light photodetection

Abstract: Lead-free layered double perovskite nanocrystals (NCs) with tunable visible range emission, high carrier mobility and low trap density are the need of the hour to make them applicable for optoelectronic and photovoltaic devices. Introduction of Cu2+ in the high band gap Cs3Sb2Cl9 lattice transforms it to the monoclinic Cs4CuSb2Cl12 (CCSC) NCs having a direct band gap of 1.96 eV. The replacement of 50% Cl− by I− ions generates <5 nm Cs4CuSb2Cl6I6 (C6I6) monodispersed NCs with an unchanged crystal system but … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
5
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
7
1

Relationship

2
6

Authors

Journals

citations
Cited by 8 publications
(5 citation statements)
references
References 60 publications
0
5
0
Order By: Relevance
“…The Nyquist plots enabled us to experimentally elucidate the role of charge transfer processes in the self-powered devices under illumination (Figure S29 and Table S16). 4N4-Br/I devices exhibit the lowest contact resistance ( R CO ) and charge transfer resistance ( R CT ), and both these parameters increase unfavorably from 4N4 to 8N8. A higher carrier lifetime helps in better charge transport and photoresponse properties, and from the Bode plots, the lifetime is observed to increase as 0.02, 0.47, and 0.85 ms for 8N8-Br/I, 6N6-Br/I, and 4N4-Br/I devices, respectively (Figure S30).…”
Section: Resultsmentioning
confidence: 99%
“…The Nyquist plots enabled us to experimentally elucidate the role of charge transfer processes in the self-powered devices under illumination (Figure S29 and Table S16). 4N4-Br/I devices exhibit the lowest contact resistance ( R CO ) and charge transfer resistance ( R CT ), and both these parameters increase unfavorably from 4N4 to 8N8. A higher carrier lifetime helps in better charge transport and photoresponse properties, and from the Bode plots, the lifetime is observed to increase as 0.02, 0.47, and 0.85 ms for 8N8-Br/I, 6N6-Br/I, and 4N4-Br/I devices, respectively (Figure S30).…”
Section: Resultsmentioning
confidence: 99%
“…The materials developed were RbCu 2 I 3 microwires (UV photodetection) [27] and Cs 4 CuSb 2 Cl 12−x I x nanocrystals (visible photodetection) [28]. The performances reported were modest, with specific detectivities (D * ) in the range of 10 8 -10 9 Jones [27,28] (commercial UV and visible photodetectors have D * ∼10 12 Jones [26]), with responsivities reaching 0.38 A W −1 (340 nm wavelength illumination; RbCu 2 I 3 [27]) and 0.67 A W −1 (1-Sun illumination; Cs 4 CuSb 2 Cl 6 I 6 [28]), which is close to the ideal responsivity associated with the bandgap of ∼2 eV. These works therefore hint at the potential of Cu-based PIMs for solution-processed photodetectors, and which warrant further development.…”
Section: Photodetection Applications Of Pimsmentioning
confidence: 99%
“…The photovoltaic (PSC) and optoelectronic (photodetector, FET, and LED) devices with the NC films are discussed in the light of the NC film quality along with the highest obtained photovoltaic and optoelectronic parameters. Here we have focused our discussion on the lead-based perovskite systems, although lead-free perovskite optoelectronic devices are also prevalent in the literature, albeit with compromised performances …”
Section: Introductionmentioning
confidence: 99%