Crystallographic wet chemical etching of GaN

Stocker, D. A.; Schubert, E. Fred; Redwing, Joan M.

doi:10.1063/1.122543

Cited by 230 publications

(183 citation statements)

References 18 publications

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“…These films are degenerately ntype (~ 10 20 cm -3 ) due to residual defects or impurities. Ti metal contacts were patterned by liftoff on the periphery of the samples, and etching performed in a standard electrochemical cell consisting of a teflon sample holder and a Pt wire cathode [2][3][4][5][6][9][10][11][12][13][14]. An unfiltered 450W Hg arc lamp ~ 15cm from the sample provided illumination of the samples, which were immersed in unstirred KOH, NaOH or H 2 O/AZ400K solutions.…”

Section: Methodsmentioning

confidence: 99%

“…Molten KOH and elevated temperature H 3 PO 4 can produce etch pits on GaN [2,3]. Recently hot solutions (90-180ºC) of KOH or NaOH in ethylene glycol and KOH or H 3 PO 4 at similar temperatures have been used to produce well-defined crystallographic etching of wurtzite GaN after initial formation of mesas by dry etching [4]. If the GaN nearsurface region has been damaged by processes such as dry etching or high temperature annealing, H 3 PO 4 , NaOH or KOH solutions have been found to remove the N 2 -deficient material and stop at the underlying undamaged GaN [5].…”

Section: Introductionmentioning

confidence: 99%

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Photoelectrochemical Etching of In_xGa_1−xN

Cho

Donovan

Abernathy

et al. 1999

MRS Internet j. nitride semicond. res.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Photoelectrochemical Etching of In_xGa_1−xN

Cho

Donovan

Abernathy

et al. 1999

MRS Internet j. nitride semicond. res.

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“…We used in our study two well-known wet etchants suitable for GaN, KOH [20] and TMAH [21]. TMAH has shown more reduction in the waveguide sidewall roughness as compared to that observed with KOH.…”

Section: Wet-chemical Post-processing and Surface Roughness Measurementsmentioning

confidence: 99%

Fabrication and optical characterization of GaN waveguides on (−201)-oriented β-Ga_2O_3

Awan

Muhammad

Sivan

et al. 2017

Opt. Mater. Express

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KAUST RepositoryAbstract: Gallium nitride (GaN), a wide-bandgap III-V semiconductor material with a bandgap wavelength λ g = 366 nm (for Wurtzite GaN) and transparency window covering the visible spectrum, has a large number of applications for photonics and optoelectronics. However, the optical quality of this material suffers from growth imperfections due to the lack of a suitable substrate. Recent studies have shown that GaN grown on (-201) β − Ga 2 O 3 (gallium oxide) has better lattice matching and hence superior optical quality as compared to GaN grown traditionally on Al 2 O 3 (sapphire). In this work, we report on the fabrication of GaN waveguides on Ga 2 O 3 substrate, followed by a wet-etch process aimed at the reduction of waveguide surface roughness and improvement of side-wall verticality in these waveguides. The propagation loss in the resulting waveguides has been experimentally determined to be 7.5 dB/cm.

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“…In Palacios et al's report [87], using kali hydroxide (KOH) at 80 o C, etching was only observed on the N-face and not the Ga-face. Nowaday, phosphoric acid (H 3 PO 4 ) [88], [89] is the most commonly used etchant in GaN device fabrication. The H 3 PO 4 etching process is often carried out at the high temperatures (~190 o C) with a etching rate varying in the range of 0.013 -3.2 µm/min [88].…”

Section: Basic Propertiesmentioning

confidence: 99%

Investigation of deep levels in bulk GaN

Duc¹

2014

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The first gallium nitride (GaN) crystal was grown by hydride vapor phase epitaxy in 1969 by Maruska and Tietjen and since then, there has been an intensive development of the field, especially after the ground breaking discoveries concerning growth and p-type doping of GaN done by the 2014 year Nobel Laureates in Physics, Isamu Akasaki, Hiroshi Amano and Shuji Nakamura. GaN and its alloys with In and Al belong to a semiconductor group which is referred as the III-nitrides. It has outstanding properties such as a direct wide bandgap (3.4 eV for GaN), high breakdown voltage and high electron mobility. With these properties, GaN is a promising material for a variety of applications in electronics and optoelectronics. The perhaps most important application is GaN-based light-emitting-diodes (LED) which can produce a highbrightness blue light. Since the bandgap of GaN can be controlled by alloying it with aluminium (Al) or indium (In) for a larger or smaller bandgap, respectively, GaN is very important for optoelectronic applications from infrared to the deep ultraviolet region. There are other semiconductors with bandgap similar to GaN such as SiC, and the first commercially blue light emitting LEDs where manufactured in SiC, however, SiC has an indirect bandgap with a low efficiency of emitting photons, and today, the SiC based LEDs have been completely replaced by the considerable more efficient GaN based LEDs. One problem, which has hampered the development of GaN based devices, is the lack of native substrate of GaN. Due to that, most of the GaN based devices are fabricated on foreign substrates such as SiC or Al2O3. Growing on a foreign substrate results in high threading dislocation (TD) densities (~109 cm-2) and stress in the GaN layer due to lattice mismatch and difference of thermal expansion coefficient between GaN and the substrate. The high TD density and the stress influence the performance of the devices. Another important aspect related to GaN which has attracted manystudies is how defects affect the efficiency of GaN-based devices.Therefore, it is necessary to understand the properties and to identifythem. When we know there properties, one can estimate how they willinfluence the behavior of devices, and thereby, optimize the performance of the device for its application. Basically, a fundamental knowledge of defect properties, and how to introduce them in a controlled manner, or to avoid them, is important in order to optimize the performance of devices. Defects can be introduced both intentionally and unintentionally into semiconductors during the growth process, during processing of the device or from the working environment, for example, devices working in a radioactive ambient are more likely to have defects induced by irradiation. This thesis is focused on electrical characterization of defects in bulk GaN grown by halide vapor phase epitaxy (HVPE) by using deep level transient spectroscopy. Other measurement techniques like currentvoltage measurement (IV), capacitance-voltage measurement (CV) a...

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Crystallographic wet chemical etching of GaN

Cited by 230 publications

References 18 publications

Photoelectrochemical Etching of In_xGa_1−xN

Photoelectrochemical Etching of In_xGa_1−xN

Fabrication and optical characterization of GaN waveguides on (−201)-oriented β-Ga_2O_3

Investigation of deep levels in bulk GaN

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Crystallographic wet chemical etching of GaN

Cited by 230 publications

References 18 publications

Photoelectrochemical Etching of InxGa1−xN

Photoelectrochemical Etching of InxGa1−xN

Fabrication and optical characterization of GaN waveguides on (−201)-oriented β-Ga_2O_3

Investigation of deep levels in bulk GaN

Contact Info

Product

Resources

About

Photoelectrochemical Etching of In_xGa_1−xN

Photoelectrochemical Etching of In_xGa_1−xN