We use density functional theory to investigate the influence of surface vacancies on the surface stability of a stoichiometric free-standing LaAlO 3 (001) thin film. Defect-free three and five unit cell thick LaAlO 3 (001) thin films show macroscopic electric fields of 0.28 V/Å and 0.22 V/Å, respectively. The built-in electric field is sufficiently strong for the five unit cell thick film to undergo a dielectric breakdown in the local density approximation. We show that the electric field can be effectively compensated by La vacancies on the LaO surface, O vacancies on the AlO 2 surface, or both types of vacancy present at the same time. Comparing surface Gibbs free energies we show that several surface vacancy structures are thermodynamically stable.