Crystallographic Properties of Aluminum-Doped Barium Zirconium Titanate Thin Films by Sol Gel Process

Abstract

We studied the crystallographic of Barium Zirconium Titanate thin films with Aluminum doped (BZAT). These films were prepared by sol-gel process and followed by spin coating. The sintering temperature is taken at 800°C and 900°C. We found that the crystallographic system of BZAT thin films have tetragonal structure with the lattice parameter slightly changed by various Aluminum partial substitution. When 0.01 Al moles added, the grain size of the films is 29.42 nm at 800°C. The sintering temperature 900°C increased the grain size into 50.95 nm. We also calculated the spontaneous polarization theoretically and we found the optimum value of BZT thin film with 0.01 mole Al heated at 800°C, is 0.143 C/m2. This way, we could predict that the film has ferroelectric phase.

The Electrical Hysteresis Loop and Polarization Value of BaZrxTi1-xO3 Multilayer Films Material at Different Annealing Temperature (x = 0.1 and 0.08) based on Sawyer Tower Circuit

“…The research of ion substitution into structure is still in progress to find the best characteristics of barium titanate, since the substitution of other ions on ABO 3 structure will change its characteristics 4 . Vijatovic studied the influence of lanthanum doped BaTiO 3 and stated that lanthanum is improving the dielectric properties 5 .…”