Crystallographic Mapping of Guided Nanowires by Second Harmonic Generation Polarimetry

Neeman, Lior; Ben-Zvi, Regev; Rechav, Katya; Popovitz‐Biro, Ronit; Oron, Dan; Joselevich, Ernesto

doi:10.1021/acs.nanolett.6b04087

Cited by 21 publications

(31 citation statements)

References 62 publications

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“…Moreover, the efficient generation of SHG signal, from several ZnO nanostructures, has been reported. For instance, Neeman et al reported crystallographic mapping of ZnO nanowires using the SHG method [25]. Han et al also used the SHG microscopy method to detect the lattice distortion in a bent ZnO nanowire [26].…”

Section: Introductionmentioning

confidence: 99%

Influences of Ga Doping on Crystal Structure and Polarimetric Pattern of SHG in ZnO Nanofilms

et al. 2019

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The second-harmonic generation (SHG) in gallium doped ZnO (GZO) nanofilms was studied. The Ga doping in GZO nanofilms influenced the crystal structure of the films, which affected SHG characteristics of the nanofilms. In our experiments, a strong SHG response was obtained in GZO nanofilms, which was excited by 790 nm femtosecond laser. It was observed that the Ga doping concentrations affected, not only the intensity, but also the polarimetric pattern of SHG in GZO nanofilms. For 5.0% doped GZO films, the SHG intensity increased about 70%. The intensity ratio of SHG between the incident light polarization angle of 90° and 0°changed with the Ga doping concentrations. It showed the most significant increase for 7.3% doped GZO films, with an increased ratio of c/a crystal constants. This result was attributed to the differences of the ratios of d33/d31 (the second-order nonlinear susceptibility components) induced by the crystal distortion. The results are helpful to investigate nanofilms doping levels and crystal distortion by SHG microscopy, which is a non-destructive and sensitive method.

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Section: Introductionmentioning

confidence: 99%

Influences of Ga Doping on Crystal Structure and Polarimetric Pattern of SHG in ZnO Nanofilms

et al. 2019

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“…Various semiconducting materials such as GaN 13,[19][20][21] , ZnO [22][23][24] , ZnSe [25][26] , ZnTe 27 , CdSe 28 , CdS [29][30] and CsPbBr3 31 were grown into aligned NW arrays, guided by epitaxial and graphoepitaxial relationships with the substrate. The epitaxial growth is usually driven by the minimization of the mismatch between the NW and the substrate, which controls the growth along specific lattice directions and crystallographic orientation ( Figure.…”

Section: Introductionmentioning

confidence: 99%

Guided Growth of Horizontal ZnS Nanowires on Flat and Faceted Sapphire Surfaces

et al. 2018

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The surface-guided growth of horizontal nanowires (NWs) allows assembly and alignment of the NWs on the substrate during the synthesis, thus eliminating the need for additional processes after growth. One of the major advantages of guided growth over postgrowth assembly is the control on the NWs direction, crystallographic orientation, and position. In this study, we use the guided growth approach to synthesize high-quality, single-crystal, aligned horizontal ZnS NWs on flat and faceted sapphire surfaces, and show how the crystal planes of the different substrates affects the crystal structure and orientation of the NWs. We also show initial results of the effect of Cu doping on their photoluminescence. Such high-quality aligned ZnS NWs can potentially be assembled as key components in phosphorescent displays and markers due to their unique optical properties. The ZnS NWs have either wurtzite or zinc-blende structure depending on the substrate orientations and contain intrinsic point defects such as sulfur vacancies, which are common in this material. The crystallographic orientations are consistent with those of guided NWs from other semiconductor materials, demonstrating the generality of the guided growth phenomenon. The successfully grown ZnS NWs and the Cu doping are the first step toward the fabrication of optoelectronic devices based on ZnS nanostructures.

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“…Our group has reported the horizontal and aligned growth of cesium lead bromide (CsPbBr 3 ) nanowires that form arrays with 6-fold and 2fold symmetries, which reflect the symmetry or morphology of their sapphire substrates 8 . As with standard semiconductors, the assembly of nanowires into ordered arrays facilitated their integration into functional devices and, from a fundamental research standpoint, enables the parallel investigation of multiple highly homogenous nanowires [25][26][27][28][29][30][31][32] . Surface-guided horizontal CsPbBr 3 nanowires constitute an advantageous system for research and applications.…”

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confidence: 99%

Large lattice distortions and size-dependent bandgap modulation in epitaxial halide perovskite nanowires

et al. 2020

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Metal-halide perovskites have been shown to be remarkable and promising optoelectronic materials. However, despite ongoing research from multiple perspectives, some fundamental questions regarding their optoelectronic properties remain controversial. One reason is the high-variance of data collected from, often unstable, polycrystalline thin films. Here we use ordered arrays of stable, single-crystal cesium lead bromide (CsPbBr 3) nanowires grown by surface-guided chemical vapor deposition to study fundamental properties of these semiconductors in a one-dimensional model system. Specifically, we uncover the origin of an unusually large size-dependent luminescence emission spectral blue-shift. Using multiple spatially resolved spectroscopy techniques, we establish that bandgap modulation causes the emission shift, and by correlation with state-of-the-art electron microscopy methods, we reveal its origin in substantial and uniform lattice rotations due to heteroepitaxial strain and lattice relaxation. Understanding strain and its effect on the optoelectronic properties of these dynamic materials, from the atomic scale up, is essential to evaluate their performance limits and fundamentals of charge carrier dynamics.

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Crystallographic Mapping of Guided Nanowires by Second Harmonic Generation Polarimetry

Cited by 21 publications

References 62 publications

Influences of Ga Doping on Crystal Structure and Polarimetric Pattern of SHG in ZnO Nanofilms

Influences of Ga Doping on Crystal Structure and Polarimetric Pattern of SHG in ZnO Nanofilms

Guided Growth of Horizontal ZnS Nanowires on Flat and Faceted Sapphire Surfaces

Large lattice distortions and size-dependent bandgap modulation in epitaxial halide perovskite nanowires

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