“…In the oxide semiconductor system, a series of oxide nanowire superlattices were also grown, such as In 2 O 3 (ZnO) m (m¼4, 5) [31,32], Zn doped In 2 O 3 -SnO 2 [33], and InGaO 3 (ZnO) m (m¼3, 5) [34], corresponding to the natural superlattice structures in bulk oxide compounds. With the recent progress made on ternary oxide nanowire synthesis [35], there are increasing interests in forming ternary/binary oxide nanowire heterojunctions to investigate their unique physical properties [15,36,37]. So far, there are only few reports about axial growth of ternary/binary oxide heterojunctions [38], indicating the great challenge in axial growth for this kind of complex system.…”