Electrical resistance R(T) measurements on UAsSe and ThAsSe single crystals were performed under hydrostatic conditions at pressures up to 1.88 GPa (2 K ≤ T ≤ 300 K). For ferromagnetic UAsSe, a reduction of a low-T upturn in R(T) accompanied by an increase of T C was observed. However, this effect is smaller than that introduced by chemical substitution. For diamagnetic ThAsSe, a hump-like anomaly (T = 65 K, p = 0) vanishes at p = 1.88 GPa. However, the ratio R(4.2 K)/R(300 K) was only slightly reduced by pressure. Below 20 K, a pressure-independent logarithmic increase of R(T) over one decade in temperature has been found. The results reported here fit well with the theoretical predictions of the non-magnetic TLS Kondo model.