Crystallization Process of Silicon Thin Films with Carbon Nanotube Electron Beam (C-Beam)

Su, Kang; Woong, Lee Su; Callixte, Shikili; Jong, Kim Won; Chang, Park Kyu

doi:10.1166/jnn.2016.13595

Cited by 4 publications

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“…However, for high-power devices, many challenges should be overcome with the cold cathode electron source. For the market penetration of high-power devices such as X-ray lamps, [6][7][8][9][10][11] the structure modification process, [12][13][14] visible lightbulb, 15,16) micro-columns 17) and UV lamps, 18,19) we need a triode structure [20][21][22][23] electron beam with CNT emitters as the electron sources. The cold cathode electron beam requires an electron extraction gate mesh electrode.…”

Section: Introductionmentioning

confidence: 99%

The effect of gate mesh electrode strain on performance of cold cathode electron beam

Kang¹,

Yoo²,

Ihm³

et al. 2019

Jpn. J. Appl. Phys.

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The effect of an electron extraction electrode on electron emission was studied, in particular, the effect of the strain of a gate electrode for high-performance cold cathode electron beam fabrication. For the cold cathode electron beam with carbon nanotube emitters, the structure of a gate grid mesh electrode was one of the most important components. Gate current through the grid mesh was a serious hurdle to be overcome. When gate current is high, the electron emission current could be saturated, even if the gate bias is increased. To overcome this phenomenon, the structure of the gate electrode was optimized. By using a lower strain gate mesh structure with low-cost SUS304 material, we could reduce the gate current ratio from 17% to 8.4%. Finally, we could increase the electron emission current from 0.6 to 2.3 mA and current density from 40 to 202 mA cm−2, with a gate mesh with 77 μm strain in 1.5 N weight load.

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Section: Introductionmentioning

confidence: 99%

The effect of gate mesh electrode strain on performance of cold cathode electron beam

Kang¹,

Yoo²,

Ihm³

et al. 2019

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

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High performance carbon nanotube cold cathode for x-ray and UV devices

Yoo

Kang

Park

2018

2018 31st International Vacuum Nanoelectronics Conference (IVNC)

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Electron extraction electrode for a high-performance electron beam from carbon nanotube cold cathodes

Kang

Park

2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The effect of an electron extraction electrode on electron emission for a high-performance electron beam was studied using vertically aligned carbon nanotube emitters as a cold cathode. For the lower electron emission regime (anode current less than 1 mA), the gate electrode structure and materials used had little effect on the electron emission current. However, at the higher electron emission regime (anode current higher than 1 mA), the gate electrode materials and structure do begin to deviate from an ideal Fowler–Nordheim plot by the thermal and electrostatic load on the gate electrode, especially for the small cathode area. The gate mesh bends upward under a higher current load, which then increases the gate leakage current. The upward bending in the gate mesh electrode could reduce the effective electric field by increasing the gate to cathode distance, resulting in saturation of the electron emission current. For higher electron emission currents on the anode, a gate electrode comprising a lower thermal expansion coefficient material is suitable for small cathode area electron beams.

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Crystallization Process of Silicon Thin Films with Carbon Nanotube Electron Beam (C-Beam)

Cited by 4 publications

References 0 publications

The effect of gate mesh electrode strain on performance of cold cathode electron beam

The effect of gate mesh electrode strain on performance of cold cathode electron beam

High performance carbon nanotube cold cathode for x-ray and UV devices

Electron extraction electrode for a high-performance electron beam from carbon nanotube cold cathodes

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