Crystallization of P Type Amorphous Silicon (a-Si: H) by AIC Method: Effect of Aluminum Thickness

Kezzoula, F.; Kechouane, M.; Mohammed‐Brahim, Tayeb; Menari, H.

doi:10.1007/s12633-019-00129-1

Cited by 2 publications

(1 citation statement)

References 21 publications

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“…Polycrystalline silicon (poly-Si) thin films on foreign inexpensive substrates attract interest for using in microelectronics and solar cell applications [1]. The most widely used methods of poly-Si thin film preparation are solid-phase [2], laser-induced [3] and metal-induced [4] crystallization of thin films of amorphous silicon (a-Si). Metal-induced crystallization (MIC) of a-Si thin films provides relatively low temperatures and annealing times because of using metals (aluminum, gold, silver) as a crystallization process catalyst.…”

Section: Introductionmentioning

confidence: 99%

Influence of synthesis parameters and thermal annealing on grain size of polycrystalline aluminum thin film

Merkulova

2021

J. Phys.: Conf. Ser.

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The thin polycrystalline aluminium films were synthesized on monocrystalline silicon substrates by ion-plasma sputtering. The synthesis was carried out at temperatures of 80 and 160°C and deposition rate of 10 and 110 nm/min. As-deposited films were annealed for 15 h at 550°C. The morphology of aluminium films before and after annealing was obtained using SEM images. The surfaces of as-deposited Al thin films, synthesized at high temperature, were uneven, while for low temperature films they were smooth enough with Al hillocks on the top of the film. After thermal annealing, morphology of the films was changed slightly. XRD patterns were obtained to calculate the average Al grain size of as-deposited and annealed films. The XRD analysis showed that an increase in the synthesis temperature leads to an increase in the average grain size from 50 to 84 nm and that increase in the rate of Al film synthesis leads to an increase in the average grain size from 50 to 63 nm. As the result of annealing, the average grain size increased for all samples and the final meaning was from 78 to 140 nm.

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Section: Introductionmentioning

confidence: 99%

Influence of synthesis parameters and thermal annealing on grain size of polycrystalline aluminum thin film

Merkulova

2021

J. Phys.: Conf. Ser.

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Electrical and Structural Properties of Crystallized Amorphous Silicon Thin Films

Shariah

Bataineh

2022

Silicon

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Crystallization of P Type Amorphous Silicon (a-Si: H) by AIC Method: Effect of Aluminum Thickness

Cited by 2 publications

References 21 publications

Influence of synthesis parameters and thermal annealing on grain size of polycrystalline aluminum thin film

Influence of synthesis parameters and thermal annealing on grain size of polycrystalline aluminum thin film

Electrical and Structural Properties of Crystallized Amorphous Silicon Thin Films

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