Abstract:Flash lamp annealing (FLA) is a short-duration annealing technique that can crystallize amorphous silicon (a-Si) films for thin-film polycrystalline Si (poly-Si) solar cells. We investigated the crystallization of n-type hydrogenated a-Si (n-a-Si:H) films formed by catalytic chemical vapor deposition on Si nitride- (SiN
x
-) coated textured glass substrates. The n-a-Si:H films with a thickness of ∼2.7 μm were crystallized by FLA with no film peeling eve… Show more
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