Crystallization of amorphous silicon thin-film on glass substrate preheated at 650 °C using Xe arc flash of 400 μs

Kim, Dong‐Hyun; Kim, Byung-Kuk; Kim, Hyoung June; Park, Seung Ho

doi:10.1016/j.tsf.2012.07.006

Cited by 22 publications

(14 citation statements)

References 30 publications

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“…Recently, a flash lamp annealing system has been optimized to apply a virtual heating strategy for low-temperature polycrystalline Si transistor technology [6,7]. The applicability of this system has been demonstrated in glass substrates with pre-compaction for minimized glass deformation in high-temperature processing in the LTPS processes and dehydrogenation for eliminating the hydrogen content immersed in amorphous Si thin films and Si crystallization [6,7].…”

Section: Introductionmentioning

confidence: 99%

“…The applicability of this system has been demonstrated in glass substrates with pre-compaction for minimized glass deformation in high-temperature processing in the LTPS processes and dehydrogenation for eliminating the hydrogen content immersed in amorphous Si thin films and Si crystallization [6,7]. The optimized optical heating concept has been extended to a variety of LTPS applications, and significant modifications have been made to the power supply units, which must be robust against harsh and long-duration operation in the high-powered flash mode.…”

Section: Introductionmentioning

confidence: 99%

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Effect of flash lamp annealing on electrical activation in boron-implanted polycrystalline Si thin films

Jin

Choi

et al. 2014

Materials Research Bulletin

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of flash lamp annealing on electrical activation in boron-implanted polycrystalline Si thin films

Jin

Choi

et al. 2014

Materials Research Bulletin

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“…The deposition process is followed by a short flash pulse using a xenon lamp for fast annealing, a technique that is known from crystallization of amorphous silicon and activation of doping agents in bulk amorphous silicon [10][11][12][13]. The whole procedure is performed under ambient pressure (*1 bar) or moderate vacuum conditions (*10 -3 mbar).…”

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confidence: 99%

Polycrystalline silicon foils by flash lamp annealing of spray-coated silicon nanoparticle dispersions

et al. 2015

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A novel technique for the preparation of thin silicon foils (d & 10 lm) starting from silicon nanoparticle dispersions is reported. The basic steps are ultrasonic spray coating of mixtures of silicon nanoparticles and organosilicon compounds and subsequent flash lamp annealing (FLA). The organosilicon compounds are used to stabilize the silicon nanoparticles in dispersion. The FLA induces melting of the silicon nanoparticles which transform into polycrystalline silicon thin films. Parameter adjustment (e.g., pressure, flash duration, flash energy, and substrate temperature) allows for the preparation of thin films as well as free-standing and flexible silicon foils. If the sprayed film thickness reaches a critical value (d & 20 lm) and the FLA is performed under vacuum conditions (5 9 10 -3 mbar), then the film peels off from the molybdenum substrate. In a following step, the foil is flashed by FLA from the backside. This method targets thin silicon foils exhibiting thicknesses between 5 and 10 lm. The lateral size of silicon foils depends on the setup used. In this work, samples with a maximum area of approximately 5 9 5 cm 2 were produced. The silicon foils were investigated by scanning electron microscopy and spectroscopic ellipsometry to determine thickness, surface structure, and the effective dielectric response. The compositions (Si, C, and O) and the bond characteristics of Si-O and Si-C were analyzed by means of energy dispersive

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“…Schematic diagram of the flash lamp annealing system and structure of the specimen (12) 통형의 램프에서 방사되는 복사광을 모으기 위하 여 타원형의 반사갓(reflector)을 제작하였다. (12) 유리기판 위의 박막 층의 두께는 전체 시편의 길 이와 폭에 비하여 매우 작으므로 1 차원 전도 및 복 사열전달 현상으로 가정 할 수 있고, 기판과 실리콘 박막 등 각층에 대한 에너지방정식은 다음과 같다. (9,11,12) 보다 높아 고상-액상-고상과정을 통한 결정화가 일어날 것으로 예상된다.…”

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“…(12) 유리기판 위의 박막 층의 두께는 전체 시편의 길 이와 폭에 비하여 매우 작으므로 1 차원 전도 및 복 사열전달 현상으로 가정 할 수 있고, 기판과 실리콘 박막 등 각층에 대한 에너지방정식은 다음과 같다. (9,11,12) 보다 높아 고상-액상-고상과정을 통한 결정화가 일어날 것으로 예상된다. 각 재료의 물 성은 온도에 따라 크게 변하므로, (11,14~17) ( ) 1 1 Fig.…”

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Thermal Deformation of Glass Backplane during Flash Lamp Crystallization Process of Amorphous Silicon

Kim

et al. 2012

Transactions of the Korean Society of Mechanical Engineers B

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그리스문자 β : 열팽창률 (m/m-K) 초록: 플래시 램프 열처리(Flash lamp annealing, FLA) 공정은 저온폴리실리콘의 생산을 위한 기술로써 대면적 기판용 실리콘 결정화 기술로 기대 받고 있는 기술이다. 본 연구에서는 FLA 공정 중 기판에 발 생하는 변형의 원인에 대하여 이론적인 해석과 이를 토대로 시뮬레이션을 수행하였다. 상용 FEM 해석 프로그램에 고온에서의 유리의 점성에 대한 모델을 적용하여, 고온에서 유리의 구조적인 수축과 응력이 완으로 인한 영구변형을 수치적으로 재현하였다. 0 세대 실험시편(2cm x 2cm)의 경우 중력의 영향이 미미 하여서, 실험 결과와 일치하는 'U'모양의 변형이 남는 것을 확인하였고, 4 세대 기판(74cm x 94cm)의 경우 중력으로 인하여 'M'모양의 변형이 발생하는 것을 시뮬레이션하였다.Abstract: The flash lamp annealing (FLA) process has been considered highly promising for manufacturing lowtemperature polysilicon on large-scale backplanes. Based on a theoretical estimation, this study clarifies the critical mechanisms of glass backplane deformation during the FLA process. A simulation using a commercial FEM code with viscoelastic models shows that the local region, whose temperature is larger than the glass softening point, undergoes permanent structural shrinkage owing to stress relaxation. For larger backplanes (4th Gen), structural shrinkages and gravitational deflection are critical to deformation in the FLA process, resulting in an "M" shape; in smaller backplanes (0th Gen), the latter is negligible, resulting in a "U" shape. § 이 논문은 2012 년도 대한기계학회 마이크로/나노공학 부문 춘계학술대회(2012. 5. 17.-18., KIMM) 발표논문임 † Corresponding Author, spark@hongik.ac.kr

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Crystallization of amorphous silicon thin-film on glass substrate preheated at 650 °C using Xe arc flash of 400 μs

Cited by 22 publications

References 30 publications

Effect of flash lamp annealing on electrical activation in boron-implanted polycrystalline Si thin films

Effect of flash lamp annealing on electrical activation in boron-implanted polycrystalline Si thin films

Polycrystalline silicon foils by flash lamp annealing of spray-coated silicon nanoparticle dispersions

Thermal Deformation of Glass Backplane during Flash Lamp Crystallization Process of Amorphous Silicon

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