Crystallization of amorphous InAs/GaAs films on GaAs

Growth of Fe3Si/Ge/Fe3Si trilayers on GaAs(001) using solid-phase epitaxy

“…We used a solid-phase epitaxy (SPE) approach whereby Ge is deposited at low temperature on ferromagnetic quasi-Heusler compound Fe 3 Si and crystallized by annealing, a method that has been successful for other types of semiconductor thin films. 23,24 The materials chosen are known to have a very small lattice misfit 25 (as low as 0.08% for Ge and Fe 3 Si). Furthermore, Ge grows crystalline at low temperatures for a semiconductor, which offers better chances of preventing reactions with a metallic substrate during annealing.…”

Interface properties of (In,Ga)As/GaAs quantum wells grown by solid-phase epitaxy

“…1 Dark-field (DF) TEM investigations using the chemically sensitive g 002 reflection reveals the formation of high quality (In,Ga)As QWs with a complete alloying of the amorphous InAs/GaAs double layer, as shown in Fig. Solid-phase epitaxy of InAs on GaAs(001) SPE of InAs on GaAs(001) relies on the condensation of the binary and/or ternary compounds at low temperature (resulting in the formation of an amorphous layer) and the a) Electronic mail: luna@pdi-berlin.de subsequent transformation into the crystalline state by increasing T s .…”

“…1 Indeed, the idea behind such approach is to explore new fabrication methods for the successful realization of wirelike and dotlike low-dimensional structures on patterned GaAs templates for their use as functional units, e.g., narrow carrier, spin transport channels, and single photon sources. 1 Indeed, the idea behind such approach is to explore new fabrication methods for the successful realization of wirelike and dotlike low-dimensional structures on patterned GaAs templates for their use as functional units, e.g., narrow carrier, spin transport channels, and single photon sources.…”

“…1 Indeed, the idea behind such approach is to explore new fabrication methods for the successful realization of wirelike and dotlike low-dimensional structures on patterned GaAs templates for their use as functional units, e.g., narrow carrier, spin transport channels, and single photon sources. 1 SPE is based on the structural transition from amorphously deposited compounds to epitaxial films via thermally induced crystallization. In this respect, SPE has not only allowed the fabrication of high quality (In,Ga)As/GaAs quantum wells (QWs) on plane GaAs(001), but opened up the way to the controlled formation of wirelike (In,Ga)As structures on, e.g., patterned GaAs(113)A.…”

Effect of thermal annealing on the crystallization of low-temperature-grown In0.42Ga0.58As on InP substrate

“…Peak position Lattice constant (Å) on q x axis on q z axis a These results reveal a possibility of a thermally induced structural transition from the deposited amorphous material to epitaxial films, the so-called solid-phase epitaxial growth (SPEG), 24,25) for the ternary alloy In x Ga 1−x As. Although a columnar structure on the amorphous layer was maintained even after annealing at 600 °C, the diffraction pattern of the layer nearest to the sample surface [Fig.…”