Crystallization of amorphous Ge films induced by semiconductor diode laser annealing

Sakaike, Kohei; Higashi, Seiichiro; Murakami, Hideki; Miyazaki, Seiichi

doi:10.1016/j.tsf.2007.08.028

Cited by 53 publications

(43 citation statements)

References 14 publications

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“…These values are the highest among those previously reported for poly-Ge layers on amorphous substrates in low-temperature processes [5][6][7][8][9][10][11][12][13][14]. In our previous work on AIC-Ge annealed at 410 ˚C [30], the (111) fraction and the grain size were limited to 68% and 5 m, respectively.…”

Section: Resultsmentioning

confidence: 54%

“…Regarding the crystal orientation, (111)-oriented Ge is favorable for forming nanowires, which dramatically enlarge the light-absorbing area [3,4]. Many researchers have developed advanced growth techniques: solid-phase crystallization (SPC) [5][6][7], metal-induced SPC [8][9][10], laser annealing [11][12][13], and chemical vapor deposition (CVD) [14]. However, the resulting Ge layers consist of small, submicron grains, with nearly random orientations.…”

Section: Introductionmentioning

confidence: 99%

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Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates

Toko

Fukata

Nakazawa

et al. 2013

Journal of Crystal Growth

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Manuscript_Revised2.docx Click here to view linked References High-quality crystalline Ge thin-films on low-cost glass substrates are desired to reduce the fabrication cost of high-efficiency tandem solar cells. We applied an Al-induced crystallization technique to amorphous-Ge films (50-nm thickness) on SiO 2 glass substrates. The annealing temperature of the sample strongly influenced the grain size and the crystal orientation in the grown polycrystalline Ge layers: low annealing temperatures resulted in large grains and high (111)-orientation fractions. As a result, annealing at 325 ˚C provided 98% (111)-oriented grains with average diameters of 30-m. Moreover, the grown Ge layers could be used as an epitaxial template for chemical vapor deposition. This large-grained Ge film on a SiO 2 substrate appears promising for use as a Ge light-absorbing layer, as well as an epitaxial buffer layer for group III-V compound semiconductors.

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Section: Resultsmentioning

confidence: 54%

Section: Introductionmentioning

confidence: 99%

Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates

Toko

Fukata

Nakazawa

et al. 2013

Journal of Crystal Growth

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“…This effect can be most likely explained by a crystallization effect of the molybdenum. The laser-induced crystallization is well-known for different materials [48][49][50].…”

Section: Experimental and Theoretical Resultsmentioning

confidence: 99%

Nanodrilling of fused silica using nanosecond laser radiation

Lorenz

Zajadacz

Bayer

et al. 2015

Applied Surface Science

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“…As mentioned above, therefore, to take advantage of the superior properties of Ge, poly‐Ge thin films have been investigated as a low‐cost substitute for the expensive single crystalline Ge substrates for large‐area electronic and photovoltaic applications. Recently, several crystallization processes for α ‐Ge have been reported to obtain high quality poly‐Ge films such as solid phase crystallization (SPC), laser annealing, and metal‐induced crystallization (MIC) . However, crystallization of α ‐Ge with SPC process requires high annealing temperature around 500°C, which is too high for inexpensive substrates.…”

Section: Introductionmentioning

confidence: 99%

Effects of gold‐induced crystallization process on the structural and electrical properties of germanium thin films

Kabaçelik

Kulakçı

Turan

et al. 2018

Surface & Interface Analysis

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Gold-induced (Au-) crystallization of amorphous germanium (α-Ge) thin films was investigated by depositing Ge on aluminum-doped zinc oxide and glass substrates through electron beam evaporation at room temperature. The influence of the postannealing temperatures on the structural properties of the Ge thin films was investigated by employing Raman spectra, X-ray diffraction, and scanning electron microscopy. The Raman and X-ray diffraction results indicated that the Au-induced crystallization of the Ge films yielded crystallization at temperature as low as 300°Cfor 1 hour. The amount of crystallization fraction and the film quality were improved with increasing the postannealing temperatures. The scanning electron microscopy images show that Au clusters are found on the front surface of the Ge films after the films were annealed at 500°C for 1 hour. This suggests that Au atoms move toward the surface of Ge film during annealing. The effects of annealing temperatures on the electrical conductivity of Ge films were investigated through current-voltage measurements. The room temperature conductivity was estimated as 0.54 and 0.73 Scm −1 for annealed samples grown on aluminum-doped zinc oxide and glass substrates, respectively. These findings could be very useful to realize inexpensive Ge-based electronic and photovoltaic applications.

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Crystallization of amorphous Ge films induced by semiconductor diode laser annealing

Cited by 53 publications

References 14 publications

Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates

Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates

Nanodrilling of fused silica using nanosecond laser radiation

Effects of gold‐induced crystallization process on the structural and electrical properties of germanium thin films

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