“…3b where the external quantum efficiency (EQE) increases from a maximum of 63% at 500 nm for the device from p-XL up to 70% for the p-XL-BA solvent mixture. The improved device performance of the p-XL-BA mixed solvent systems can be attributed to morphological change of the P3HT/PCBM thin film blend caused by the slower evaporation rate of the high boiling point component (BA) upon spin coating and drying process, because the morphology of the P3HT:PCBM is largely dependent on the solution processing conditions [1][2][3]6,10,17]. Table 2 summarizes the performances of the devices from the solvent systems used in this work: pure MS, p-XL, 80-20 vol.% MS-AP, 80-20 vol.% p-XL-AP, 80-20 vol.% p-XL-BA and pure DCB.…”