2001
DOI: 10.1016/s0040-6090(00)01569-8
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Crystallization effects in oxygen annealed Ta2O5 thin films on Si

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Cited by 62 publications
(38 citation statements)
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“…It displays that the as-deposited film and the film annealed at 873 K are both amorphous. After annealed at 1073 K, as XRD result shows, the amorphous Ta 2 O 5 film crystallizes to hexagonal phase [18], so the temperature of the phase transition is between 873 and 1073 K. The orthorhombic phase of Ta 2 O 5 appears when the annealing temperature increases to 1273 K, which is consistent with previous results [18,19]. It indicates that when annealed at low temperature ( 673 K), the modifiability of atoms in films is limited in amorphous structure, while at high temperature (!873 K), the case is different and more complicated that amorphous Ta 2 O 5 transforms to crystal Ta 2 O 5 , which is hexagonal phase at 1073 K and orthorhombic phase at 1273 K, respectively.…”
Section: Methodsmentioning
confidence: 99%
“…It displays that the as-deposited film and the film annealed at 873 K are both amorphous. After annealed at 1073 K, as XRD result shows, the amorphous Ta 2 O 5 film crystallizes to hexagonal phase [18], so the temperature of the phase transition is between 873 and 1073 K. The orthorhombic phase of Ta 2 O 5 appears when the annealing temperature increases to 1273 K, which is consistent with previous results [18,19]. It indicates that when annealed at low temperature ( 673 K), the modifiability of atoms in films is limited in amorphous structure, while at high temperature (!873 K), the case is different and more complicated that amorphous Ta 2 O 5 transforms to crystal Ta 2 O 5 , which is hexagonal phase at 1073 K and orthorhombic phase at 1273 K, respectively.…”
Section: Methodsmentioning
confidence: 99%
“…Huang and Chu obtained amorphous films at substrate temperature of 773 K, while the addition of water vapor during the rf sputtering leads to crystalline films [14]. Dimitrova et al observed amorphous to crystalline phase transition when annealed at temperatures between 873 K and 1123 K in rf magnetron sputtered films [15]. Thus it is worth noting that in the present investigation polycrystalline films of tantalum oxide were obtained when annealed at low temperature of 573 K and crystallinity of the films improved with the increase of annealing temperature to 973 K. The grain size of the films was evaluated from the Scherrer's relation.…”
Section: Resultsmentioning
confidence: 99%
“…Due to its large dielectric constant, Ta 2 O 5 has been practically the most promising capacitor material to be used in the near future in the microelectronics and integrated micro-technologies, which is being hotly studied [1,2] . On the other hand, for its good environment stability and high refractive index, Ta 2 O 5 thin films have attracted great attention in the optical fields, such as waveguides [3] , dielectric mirrors [4] , narrow-band interference filters [5] , and etc.…”
Section: Introductionmentioning
confidence: 99%
“…On the other hand, for its good environment stability and high refractive index, Ta 2 O 5 thin films have attracted great attention in the optical fields, such as waveguides [3] , dielectric mirrors [4] , narrow-band interference filters [5] , and etc. There are numerous methods for the fabrication of Ta 2 O 5 thin films, electron beam evaporation [2,3,6,7] , Radio-frequency sputtering [1] , ion beam sputtering [4,5,8,9] , DC magnetron sputtering [10] , pulse laser deposition [11] , and etc. The properties of Ta 2 O 5 thin films strongly depend on the fabrication methods and fabrication conditions, more work is still needed to clarify the relation between a specific technological process and the properties of Ta 2 O 5 thin films.…”
Section: Introductionmentioning
confidence: 99%