These vertically aligned Ta 2 O 5 nanorods were deposited on Si (100) substrates by thermal deposition in a vacuum of the order of 10 À2 Torr at about 600 C. When excited by 514 nm Ar þ laser, they showed a strong photoluminescence at $622 nm, which was attributed to the oxygen vacancies. In addition, their dielectric constant is $20 in the frequency range from 1 kHz to 10 MHz, far larger than that of SiO 2 and Si 3 N 4 . Due to this cone-shaped morphology, the Ta 2 O 5 nanorods exhibited a threshold field of $8:5 V/mm in field emission and a field enhancement factor of 764 that are sufficiently high for field emission application.