2003
DOI: 10.1063/1.1610247
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Crystallization control of sputtered Ta2O5 thin films by substrate bias

Abstract: Low temperature rf sputtering deposition of (Ba, Sr) Ti O 3 thin film with crystallization enhancement by rf power supplied to the substrate J.

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Cited by 40 publications
(17 citation statements)
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“…At a substrate bias of −300 V, the (0 0 2) peak disappeared suggesting a preferential orientation of the thin films. Similar trends have been observed for Ta 2 O 5 thin films [16]. Moreover, the main peak shift in the XRD pattern at −300 V bias was observed and it was believed to be a result of larger stress in the thin films under a higher bias [22].…”
Section: Methodssupporting
confidence: 68%
See 1 more Smart Citation
“…At a substrate bias of −300 V, the (0 0 2) peak disappeared suggesting a preferential orientation of the thin films. Similar trends have been observed for Ta 2 O 5 thin films [16]. Moreover, the main peak shift in the XRD pattern at −300 V bias was observed and it was believed to be a result of larger stress in the thin films under a higher bias [22].…”
Section: Methodssupporting
confidence: 68%
“…Besides, it is believed that the application of an electrical bias is an effective way to increase both the ionization density and the energy of incoming particles from the gas phase onto the surfaces, and so it is beneficial to the increase of the nucleation density and fabrication of oriented thin films [15]. In our previous work [16], it was demonstrated that the crystallinity and orientation of high-k Ta 2 O 5 thin films deposited on Si(1 0 0) could indeed be modified by substrate biasing at a low substrate temperature.…”
Section: Introductionmentioning
confidence: 99%
“…It can be clearly seen that the band at around 600 cm À1 shifts from 640 to 510 cm À1 and the intensity of the peak at 1000-790 cm À1 weakens with the introduction of water vapor. Previously, it was reported [11] that the phonon bands of Ta 2 O 5 are mainly in the range of 1000-200 cm À1 , and Ono and Koyanagi [12] studied carefully the FTIR absorption of crystalline and amorphous Ta 2 O 5 thin films, as shown in Table 1. Among these FTIR peaks, it is noted that the absorption peak at about 640 cm À1 that corresponds to the vibration mode of O3Ta in amorphous Ta 2 O 5 thin films shifts to 510 cm À1 as the film crystallinity improves.…”
Section: Methodsmentioning
confidence: 98%
“…Currently there are various techniques to fabricate Ta 2 O 5 thin films, such as magnetron sputtering, 7) pulsed laser deposition, 8) metal organic chemical vapor deposition, 9) solgel deposition 10) and thermal oxidation, 11) etc. Within these methods, thermal oxidation is a simple and low cost method to synthesize Ta 2 O 5 thin films.…”
Section: Introductionmentioning
confidence: 99%