Crystallization Behavior and Thermal Analysis of CoFeB Thin Films

Abstract

We examined two targets containing Co40Fe40B20and Co60Fe20B20. We deposited Co40Fe40B20and Co60Fe20B20monolayer thin films of various thicknesses on glass substrates through DC magnetron sputtering; the thicknesses ranged from 25 to 200 Å. The thermal properties of the Co40Fe40B20and Co60Fe20B20thin films were determined using a differential scanning calorimeter (DSC). The thermal properties included the glass transition temperature (Tg), onset crystallization temperature (Tx), and glass-forming ability, which were determined according to these values. Using the Kissinger formula revealed that the activation energy of the Co60Fe20B20with a thickness of 75 Å is the highest, implying that crystallization was the lowest and the Co60Fe20B20film showed anticrystallization properties. However, the energy of 75 Å Co40Fe40B20thin films was the lowest, which is opposite to that of Co60Fe20B20. This observation can be reasonably explained based on the concentration of Co or Fe. Therefore, a thickness of 75 Å is critical.

Magnetic, thermal, electrical properties and crystallization kinetics of Co60Fe20B20 alloy films

“…This value is slightly larger than the value of 1.32 eV for crystallization of Co40Fe40B20 alloy films [34]. It confirms that thermal stability of Co60Fe40B20 is better than that of Co40Fe40B20 [37,38]. Additionally, the onset of temperature with rapid increasing resistivity in the high temperature region can also be fitted.…”

In Situ Deposition of Amorphous Al2O3-GAP Ceramic Coating with Excellent Microstructure Stability and Uniformity via Atmospheric Plasma Spraying

“…The onset activation energy calculated of the Al 2 O 3 -GAP amorphous coating was 847.6 kJ/mol, which was greater than that of Al 2 O 3 -YAG amorphous coating. Figure 3b compares the initial crystallization activation energy obtained by the Kissinger method for some typical amorphous materials [22,[29][30][31][32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47][48]. Conspicuously, the crystallization activation energy of the Al 2 O 3 -GAP amorphous coating reported in this work was higher than that of almost all amorphous materials, which indicated that it was extremely difficult to overcome the energy barrier to precipitate crystalline phase in the Al 2 O 3 -GAP amorphous coating.…”