Crystallinity-Controlled Atomic Layer Deposition of Ti-Doped ZrO2 Thin Films
Seokhwi Song,
Eungju Kim,
Kyunghoo Kim
et al.
Abstract:We investigated Ti-doped ZrO2 deposition using a cyclopentadienyl tris(dimethylamino) zirconium (CpZr(NMe2)3) precursor and a titanium tetraisopropoxide (TTIP) precursor using an O3 thermal atomic layer deposition process. In addition, the effect of Ti doping concentration on the chemical bonding and electrical properties of the Ti-doped ZrO2 thin films was studied. O3 was used at a high concentration of 400 g/m3. We varied the Ti doping concentration by controlling the rate of the supercycle process in the Zr… Show more
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