Crystalline to amorphous transformation in ion-implanted silicon: a composite model

Dennis, John R.; Hale, Edward B.

doi:10.1063/1.325049

Cited by 272 publications

(60 citation statements)

References 19 publications

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“…The precise level of lattice disorder required for amorphous silicon formation varies in the literature (e.g. [11][12][13]) with a more detailed explanation given in [14]. However, there is a good agreement that when the defect density threshold for amorphisation is calculated with a defect density model, the crystalline -amorphous transition occurs with a critical point defect density of 1.15 x 10 22 cm -3 [12,15].…”

Section: Design and Simulationmentioning

confidence: 77%

Erasable diffractive grating couplers in silicon on insulator for wafer scale testing

Topley

Martinez-Jimenez

О’Faolain

et al. 2014

Silicon Photonics IX

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Test points are essential in allowing optical circuits on a wafer to be autonomously tested after selected manufacturing steps, hence allowing poor performance or device failures to be detected early and to be either repaired using direct write methods, or a cessation of further processing to reduce fabrication costs.Grating couplers are a commonly used method for efficiently coupling light from an optical fibre to a silicon waveguide. They are relatively easy to fabricate and they allow light to be coupled into/out from any location on the device without the need for polishing, making them good candidates for an optical test point.A fixed test point can be added for this purpose, although traditionally these grating devices are fabricated by etching the silicon waveguide, and hence this permanently adds loss and leads to a poor performing device when placed into use after testing. We demonstrate a similar device utilising a refractive index change induced by lattice disorder. Raman data collected suggests this lattice damage is reversible, allowing a laser to subsequently erase the grating coupler.

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Section: Design and Simulationmentioning

confidence: 77%

Erasable diffractive grating couplers in silicon on insulator for wafer scale testing

Topley

Martinez-Jimenez

О’Faolain

et al. 2014

Silicon Photonics IX

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“…The first stage corresponds to a low fluence Φ, which leads to accumulation of point defects in the crystalline matrix and to slow increase of the defect concentration with an increase of Φ [5,13,14]. In the second stage, which sets up when the fluence exceeds its definite critical value, the concentration of defects steeply increases from about 10% up to approximately 80% in the fairly narrow region of fluence [3,15].…”

Section: The Effect Of Fluence On Amorphization In Ion-implanted Crysmentioning

confidence: 99%

Amorphization and stress in ion-implanted crystalline solids

Girdauskienė¹,

Požėla²

2004

Lith. J. Phys.

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The model of amorphization of crystals induced by ion irradiation is considered. The model describes two stages of the amorphization, the generation of primary defects by collision cascades and the collapse of crystalline regions, which begins when the concentration of the primary defects reaches about 10%. Due to the colapse of crystalline regions, the total defect concentration increases up to about 80% for rather small increment of the fluence Φ. The defect concentration and the integral stress were calculated theoretically for the silicon samples subjected to irradiation with light, average, and heavy mass ions. The integral stress was analysed as the sum S = S d + Sion, where the S d and Sion terms correspond to the stresses due to point defects and implanted ions, respectively. At low fluences, Φ < Φa (where Φa is the characteristic amorphization fluence), the term S d linearly depends on the fluence and essentially exceeds the stress due to implanted ions. The integral stress acquires a maximum value at Φ = Φa. At higher fluences, Φ > Φa, the term S d considerably decreases and the Sion term dominates the integral stress. In this Φ region, the stress saturates to the constant value, which is larger for the lighter ions and smaller for the heavier ones.

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“…The refractive index change introduced by ion implantation induced lattice disorder in silicon was previously reported in, for example [21]. The threshold level of lattice disorder required for amorphous silicon formation varies in the literature (e.g [22][23][24].) with a more detailed explanation given in [25].…”

Section: Amorphization Conditionsmentioning

confidence: 99%

Planar surface implanted diffractive grating couplers in SOI

Topley¹,

О’Faolain²,

Thomson³

et al. 2014

Opt. Express

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Grating couplers are used to efficiently couple light from an optical fibre to a silicon waveguide as they allow light to be coupled into or out from any location on the device without the need for cleaving. However, using the typical surface relief grating fabrication method reduces surface planarity and hence makes further processing more difficult. The ability to manufacture high quality material layers on top of a grating coupler allows multiple active optical layers to be realized for multi-layer integrated optical circuits, and may enable monolithic integration of optical and electronic circuits on separate layers. Furthermore, the nature of the refractive index change may enable removal via rapid thermal annealing for wafer scale testing applications. We demonstrate for the first time a coupling device utilising a refractive index change introduced by lattice disorder. Simulations show 44% of the power can be extracted from the waveguide by using uniform implanted gratings, which is not dissimilar to the performance of typical uniform surface relief gratings currently used. Losses determined empirically, of 5.5dB per coupler have been demonstrated. 5958-5964 (1997). 32. G. F. Cembali, P. G. Merli, and F. Zignani, "Self-annealing of ion-implanted silicon: First experimental results," Appl. Phys. Lett. 38(10), 808-810 (1981 75-77 (2008).

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Crystalline to amorphous transformation in ion-implanted silicon: a composite model

Cited by 272 publications

References 19 publications

Erasable diffractive grating couplers in silicon on insulator for wafer scale testing

Erasable diffractive grating couplers in silicon on insulator for wafer scale testing

Amorphization and stress in ion-implanted crystalline solids

Planar surface implanted diffractive grating couplers in SOI

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