2014
DOI: 10.1007/s13320-014-0165-4
|View full text |Cite
|
Sign up to set email alerts
|

Crystalline structure and surface morphology of tin oxide films grown by DC reactive sputtering

Abstract: Tin oxide thin films were deposited by direct current (DC) reactive sputtering at gas pressures of 0.015 mbar-0.15 mbar. The crystalline structure and surface morphology of the prepared SnO 2 films were introduced by X-ray diffraction (XRD) and atomic force microscopy (AFM). These films showed preferred orientation in the (110) plane. Due to AFM micrographs, the grain size increased non-uniformly as the working gas pressure increased.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2

Citation Types

1
5
0

Year Published

2015
2015
2024
2024

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 8 publications
(6 citation statements)
references
References 17 publications
(17 reference statements)
1
5
0
Order By: Relevance
“…The response time at gas concentration 165 ppm was around 4 sec and at gas concentration 220 ppm was 2 sec while the recovery time were 50 sec and 120 sec, respectively. Since SnO 2 :WO 3 films are n-type semiconductor, the oxidizing NO 2 thin film bulk molecules adsorbed on the oxide surface could captivate electrons shape the conduction band and form NO 2 (32)(33)(34). Our result is nearly similar to that obtained by Bari and Patil (35).…”
Section: Resultssupporting
confidence: 89%
“…The response time at gas concentration 165 ppm was around 4 sec and at gas concentration 220 ppm was 2 sec while the recovery time were 50 sec and 120 sec, respectively. Since SnO 2 :WO 3 films are n-type semiconductor, the oxidizing NO 2 thin film bulk molecules adsorbed on the oxide surface could captivate electrons shape the conduction band and form NO 2 (32)(33)(34). Our result is nearly similar to that obtained by Bari and Patil (35).…”
Section: Resultssupporting
confidence: 89%
“…Two different thin film stacks were studied: stacks of indium oxide (In 2 O 3 ) and stacks of tin oxide (SnO 2 ). Changes in the RI for materials such as ITO [19] and tin oxide while changing the sputtering pressure have been previously studied [18], [30], and variations of around 5% have been obtained. Therefore, changes in the RIs of indium oxide and tin oxide should be obtained just by changing the sputtering pressure.…”
Section: Resultsmentioning
confidence: 99%
“…They can be coated onto an optical fiber by different methods, such as dip-coating [ 17 , 18 , 19 ] or sputtering [ 16 , 20 ]. Sputtering permits the fine-tuning of the sputtering conditions, which would allow obtaining denser nanocoatings, with lower porosity and greater refractive indices (RI) [ 21 ] when sputtering under high vacuum. Other parameters of the thin film could also be affected by the sputtering parameters as, for example, the crystallographic orientation, the degree of crystallinity, the carrier concentration, or even the stoichiometry [ 21 , 22 , 23 ].…”
Section: Introductionmentioning
confidence: 99%