2012
DOI: 10.1016/j.solmat.2011.11.029
|View full text |Cite
|
Sign up to set email alerts
|

Crystalline-Si photovoltaic devices with ZnO nanowires

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
8
0

Year Published

2012
2012
2023
2023

Publication Types

Select...
7
1

Relationship

2
6

Authors

Journals

citations
Cited by 23 publications
(8 citation statements)
references
References 8 publications
0
8
0
Order By: Relevance
“…The first advantages were connected with antireflectance properties of an NRs array. In 2012 a paper was published on the growth of ZnO NRs on a ZnO/textured c-Si photovoltaic device through the hydrothermal method [80]. The reflectance spectra and I-V characteristics indicated that the ZnO/textured c-Si photovoltaic device with ZnO NRs had the lowest reflectance among the tested devices, especially in the range of UV and green light (350 nm to 590 nm).…”
Section: Silicon Based Pv Cellsmentioning
confidence: 99%
“…The first advantages were connected with antireflectance properties of an NRs array. In 2012 a paper was published on the growth of ZnO NRs on a ZnO/textured c-Si photovoltaic device through the hydrothermal method [80]. The reflectance spectra and I-V characteristics indicated that the ZnO/textured c-Si photovoltaic device with ZnO NRs had the lowest reflectance among the tested devices, especially in the range of UV and green light (350 nm to 590 nm).…”
Section: Silicon Based Pv Cellsmentioning
confidence: 99%
“…Nanostructures (NSs) in a semiconductor reduce the refraction ratio of incident light due to light scattering and trapping and thus increase the absorption efficiency . ZnO nanowires (NWs) show excellent UV absorption efficiency, but their surface exhibits oxygen absorption and desorption under UV irradiation, leading to a slow response and recovery. , The surface of ZnO NWs has been covered with a sheet layer of NiO, which isolates the oxygen, and thus speeds up the response and recovery.…”
Section: Introductionmentioning
confidence: 99%
“…Studies have found that zinc oxide (ZnO) is a promising material for application in a variety of devices because it is a chemically and thermally stable n‐type semiconductor with a large exciton binding energy (60 meV) and a large band gap energy (3.37 eV) at room temperature . Compared with planar thin film devices, nanostructure devices are expected to have a larger response to light, especially from ultraviolet (UV) to green light in the solar spectrum , which can increase the light absorption of the top cell for short wavelengths.…”
Section: Introductionmentioning
confidence: 99%