Crystalline quality of 3C-SiC formed by high-fluence C+-implanted Si

Intarasiri, S.; Hallén, Anders; Jensen, Jens; Yu, L.D.; Bertilsson, Kent; Wolborski, Maciej; Singkarat, S.; Possnert, Göran

doi:10.1016/j.apsusc.2006.10.055

Cited by 12 publications

(8 citation statements)

References 21 publications

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“…Therefore, we observed a diffraction peaks at 2 = 18.8°and 34.22°along with sharp 3C-SiC ͕220͖ peak at 2 = 61.7°. 32 The peak at 18.8°corresponds to adamantane ͕200͖, while 34.22°shows the presence of carbon ͕123͖. The experimental 2 values of carbon are consistent with the standard JCPDS values ͑JCPDS file no.…”

Section: Resultssupporting

confidence: 73%

Growth, microstructure, and field-emission properties of synthesized diamond film on adamantane-coated silicon substrate by microwave plasma chemical vapor deposition

Tiwari

Chang

2010

Journal of Applied Physics

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Section: Resultssupporting

confidence: 73%

Growth, microstructure, and field-emission properties of synthesized diamond film on adamantane-coated silicon substrate by microwave plasma chemical vapor deposition

Tiwari

Chang

2010

Journal of Applied Physics

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“…In addition to Si peaks, we also notice that there is a peak at 61.7 corresponding to crystalline 3C-SiC(220). 21,22) However, we did not observe any graphite peak, implying that the graphite fraction is insignificant compared to diamond phase. Furthermore, the micro-Raman spectrum in Fig.…”

mentioning

confidence: 54%

Chemical Precursor for the Synthesis of Diamond Films at Low Temperature

Tiwari

Chang

2010

Appl. Phys. Express

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In this study, diamond films have been synthesized on adamantane-coated (100) Si substrates at 530 C by microwave plasma chemical vapor deposition from a gaseous mixture of methane and hydrogen. Scanning electron microscopy, Raman spectroscopy, and X-ray diffraction were employed to characterize the carbon chemical species on the Si substrate from adamantane into diamond. These measurements provide definitive evidence for formation of high-crystalline diamond film on Si substrate without any other pretreatments. Moreover, the possible mechanisms for the diamond formation are presented.

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“…The SAED pattern ( Figure 4 b insert) shows clear six-fold symmetry, indicating single crystalline hexagonal structure in this region [ 22 , 23 ]. Since SFBs are observed in the TEM image in Figure 3 d insert and Figure 4 a, the SAED also displays a ring pattern [ 24 ].…”

Section: Resultsmentioning

confidence: 99%

Growth of Hexagonal Columnar Nanograin Structured SiC Thin Films on Silicon Substrates with Graphene–Graphitic Carbon Nanoflakes Templates from Solid Carbon Sources

et al. 2013

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We report a new method for growing hexagonal columnar nanograin structured silicon carbide (SiC) thin films on silicon substrates by using graphene–graphitic carbon nanoflakes (GGNs) templates from solid carbon sources. The growth was carried out in a conventional low pressure chemical vapor deposition system (LPCVD). The GGNs are small plates with lateral sizes of around 100 nm and overlap each other, and are made up of nanosized multilayer graphene and graphitic carbon matrix (GCM). Long and straight SiC nanograins with hexagonal shapes, and with lateral sizes of around 200–400 nm are synthesized on the GGNs, which form compact SiC thin films.

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Crystalline quality of 3C-SiC formed by high-fluence C+-implanted Si

Cited by 12 publications

References 21 publications

Growth, microstructure, and field-emission properties of synthesized diamond film on adamantane-coated silicon substrate by microwave plasma chemical vapor deposition

Growth, microstructure, and field-emission properties of synthesized diamond film on adamantane-coated silicon substrate by microwave plasma chemical vapor deposition

Chemical Precursor for the Synthesis of Diamond Films at Low Temperature

Growth of Hexagonal Columnar Nanograin Structured SiC Thin Films on Silicon Substrates with Graphene–Graphitic Carbon Nanoflakes Templates from Solid Carbon Sources

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