Crystalline and chemical quality of CdTe and Cd1-xZnxTe grown by the Bridgman method in low temperature gradients

Dislocation cell structures in melt‐grown semiconductor compound crystals

“…Also the larger disorientation angle between the neighbouring cells refers to a typical polygonized grain-boundary structure. Tilt angles of 60 -120 arc sec [26,70,73,74] and even 18 arc min [15] were reported for melt-and vapour-grown CdTe crystals, respectively.…”

“…1e) cross-glide is insignificant for dynamical polygonization and climb in combination with high-mobility glide are much more responsible. There are two facts to be said for it: i) the morphology of grains in CdTe and PbTe is not globularly shaped like in GaAs but rather stretched with features of two-dimensionality [15,33,74] referring to a prevailing glide dynamics, and ii) due to the high ionicity in II-VIs and IV-VIs the dislocations carry a large electrical charge leading to their much higher mobility in comparison to III-Vs [83]. Additionally, a higher self-diffusivity and larger content of high-temperature intrinsic point defects is typically for CdTe and PbTe expressed in larger phase extends δx in the phase diagram (i.e.…”

High Density Nano-Electrode Array for Radiation Detection

“…Cd1-xZnxTe crystals are manufactured by high 9 or low 10 pressure Bridgman techniques. Smaller thickness detector material is cut from a large ingot for integration into a sensor device.…”

Selective Etching of ZnхCd1-хTe Single Crystals

“…Для виявлення міжзеренних границь і двійників, а також ідентифікації полярності поверхні (111) Zn x Cd 1-x Te авторами [16][17][18] запропоновано використовувати розчини складу: 1 HF:3 HNO 3 : 4 (2 %-ого водного розчину AgNO 3 ) (розчин 1); 1 HF: 3 HNO 3 :5 (0,5 %-ого водного розчину AgNO 3 ) (розчин 2). Травлення проводять при кімнатній температурі у розчині 1 впродовж 30 -60 сек., а в розчині 2 -10 -15 сек., причому після обробки…”