Crystal structures and transistor properties of phenyl-substituted tetrathiafulvalene derivatives

Noda, Bunpei; Wada, Hiroshi; Shibata, K.; Yoshino, Takamasa; Katsuhara, Mao; Aoyagi, Isao; Mori, Takehiko; Taguchi, Tomohiro; Kambayashi, Takuya; Ishikawa, Ken; Takezoe, Hideo

doi:10.1088/0957-4484/18/42/424009

Cited by 31 publications

(37 citation statements)

References 53 publications

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“…Hole mobility in the range 0.1-1 cm 2 /Vs has been reported for solution-processed single crystals of DB-TTF, [18,19] whereas devices comprising vacuum-deposited DB-TTF thin films show field-effect mobility that ranges from 10 -2 to 10 -1 cm 2 /Vs ( Figure S1). [20][21][22][23] However, typically the devices are reported to exhibit large threshold voltages (V TH > 20 V) and are very unstable in environmental conditions…”

Section: Resultsmentioning

confidence: 99%

Single Crystal‐Like Performance in Solution‐Coated Thin‐Film Organic Field‐Effect Transistors

Pozo

Fabiano

Pfattner

et al. 2015

Adv Funct Materials

122

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In electronics, the field-effect transistor (FET) is a crucial corner stone and successful integration of this semiconductor device into circuit applications requires stable and ideal electrical characteristics over a wide range of temperatures and environments. Solution processing, using printing or coating techniques, has been explored to manufacture organic field-effect transistors (OFET) on flexible carriers; enabling radically novel electronics applications. Ideal electrical characteristics, in organic materials, are typically only found in single crystals. Tiresome growth and manipulation of these hamper practical production of flexible OFETs circuits. To date, neither devices nor any circuits, based on solution-processed 2 OFETs, has exhibited an ideal set of characteristics similar or better than today's FET technology based on amorphous silicon (a-Si FETs). Here, we report bar-assisted meniscus shearing of dibenzo-tetrathiafulvalene to coat-process self-organized crystalline organic semiconducting domains with high reproducibility. Including these coatings as the channel in OFETs, we observe electric field-and temperature-independent charge carrier mobility and no bias stress effects. Further, we measure record-high gain in OFET inverters and exceptional operational stability in both air and water.

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Section: Resultsmentioning

confidence: 99%

Single Crystal‐Like Performance in Solution‐Coated Thin‐Film Organic Field‐Effect Transistors

Pozo

Fabiano

Pfattner

et al. 2015

Adv Funct Materials

122

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“…37 (TTF)(TCNQ) has also been demonstrated to be an efficient electrode for n-channel transport. It was shown that in the very good electron donor TTF, the usual gold electrodes result in normally on states, while the smaller work-function organic (TTF)(TCNQ) metal leads to a lower off current and threshold voltage.…”

Section: Evaporated Ct Saltsmentioning

confidence: 99%

Organic metal engineering for enhanced field-effect transistor performance

Pfattner

Rovira

Mas‐Torrent

2015

Phys. Chem. Chem. Phys.

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A key device component in organic field-effect transistors (OFETs) is the organic semiconductor/metal interface since it has to ensure efficient charge injection. Traditionally, inorganic metals have been employed in these devices using conventional lithographic fabrication techniques. Metals with low or high work-functions have been selected depending on the type of semiconductor measured and, in some cases, the metal has been covered with molecular self-assembled monolayers to tune the work function, improve the molecular order at the interface and reduce the contact resistance. However, in the last few years, some approaches have been focused on utilizing organic metals in these devices, which have been fabricated by means of both evaporation and solution-processed techniques. Higher device performances have often been observed, which have been attributed to a range of factors, such as a more favourable organic/organic interface, a better matching of energy levels or/and to a reduction of the contact resistance. Further, in contrast to their inorganic counterparts, organic metals allow their chemical modification and thus the tuning of the Fermi level. In this perspective paper, an overview of the recent work devoted to the fabrication of OFETs with organic metals as electrodes will be carried out. It will be shown that in these devices not only is the matching of the HOMO or LUMO of the semiconductor with the metal work-function important, but other aspects such as the interface morphology can also play a critical role. Also, recent approaches in which the use of organic charge transfer salts as buffer layers at the metal contacts or on the dielectric or as doping agents of the organic semiconductors that have been used to improve the device performance will be briefly described.

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“…However, the following studies on thin-film devices based on 4 by Mori et al and by our group showed very poor FET performance, such as the low mobility, small on/off ratio, large off-current, and the lack of saturation current [28,29]. The reason might be attributed to the different measurement conditions.…”

confidence: 78%

“…The reason might be attributed to the different measurement conditions. The poor FET performance was also found in the thin-film devices based on compounds 11-16 [29][30][31]. Similar to 4, these compounds have high HOMO levels, their thin films are labile to oxygen, and the resulting dopants increase the conductivity of the film in the off-or ungated-state and lead to aforementioned poor FET performance.…”

confidence: 93%

“…The planar π-expanded molecular structure, easily chemical modification, high thermal-and air-stability, and excellent chargetransport property make DB-TTF bisimides promising organic electronic materials. As shown in Scheme 5, some bis(1,3-dithiol-2-ylidene) compounds (26)(27)(28)(29)(30)(31)(32)(33)(34)(35) that are π-expanded TTF analogs, like bis[1,2,5]thiadiazolo-p-quinobis(1,3-dithiole) (BTQBT), were studied for thin-film OFETs by Forrest and by Yamashita [32][33][34]. The FET measurements were carried out in vacuum or using another organic layer to isolate semiconductor layer from air.…”

confidence: 99%

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Organic field-effect transistors based on tetrathiafulvalene derivatives

Gao

Qiu

Liu

et al. 2008

Pure and Applied Chemistry

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In recent years, tetrathiafulvalene (TTF) and its derivatives have been used as semiconducting materials for organic field-effect transistors (OFETs). In this review, we summarize the recent progress in the field of TTF-based OFETs. We introduce the structure and operation of OFETs, and focus on TTF derivatives used in OFETs. TTF derivatives used in OFETs can be divided into three parts by the semiconductor's morphology and the device fabrication technique: (1) TTF derivatives used for single-crystal OFETs, (2) TTF derivatives used for vacuum-deposited thin-film OFETs, and (3) TTF derivatives used for solutionprocessed thin-film OFETs. The single-crystal OFETs based on TTF derivatives were fabricated by drop-casting method and showed high performance, with the mobility up to 1.4 cm 2 /Vs. The vacuum-deposited thin-film OFETs based on TTF derivatives were well developed, some of which have shown high performance comparable to that of amorphous silicon, with good air-stability. Although the mobilities of most solution-processed OFETs based on TTF derivatives are limited at 10 -2 cm 2 /Vs, the study on solution-processable TTF derivatives and their devices are promising, because of their low-cost, large-area-coverage virtues. The use of organic charge-transfer (OCT) compounds containing TTF or its derivatives in OFETs is also included in this review.

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Crystal structures and transistor properties of phenyl-substituted tetrathiafulvalene derivatives

Cited by 31 publications

References 53 publications

Single Crystal‐Like Performance in Solution‐Coated Thin‐Film Organic Field‐Effect Transistors

Single Crystal‐Like Performance in Solution‐Coated Thin‐Film Organic Field‐Effect Transistors

Organic metal engineering for enhanced field-effect transistor performance

Organic field-effect transistors based on tetrathiafulvalene derivatives

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