Crystal structure, properties and nanostructuring of a new layered chalcogenide semiconductor, Bi2MnTe4

Lee, Dong Sun; Kim, Tae Hoon; Park, Cheol Hee; Chung, Chan Yeup; Lim, Young Soo; Seo, Won Seon; Park, Hyung Ho

doi:10.1039/c3ce40643a

Cited by 176 publications

(128 citation statements)

References 40 publications

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“…The presently refined composition Mn0.75(3)Bi4. 17(3)Te7 slightly deviates from the previously reported one 27 with respect to antisite defects and cation vacancies; hence, a homogeneity range 0.15 ≤ x ≤ 0.25 for the nonstoichiometric Mn1-xx/3Bi4+2x/3Te7 phase may exist. The lattice of Mn147 (sp.…”

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confidence: 52%

“…Recently, MnBi2Te4 has arisen as the first derivative of Bi2Te3 that hosts structurally and magnetically ordered Mn atoms on well-defined crystallographic sites. [17][18][19][20] The possible emergence of an antiferromagnetic TI state in MnBi2Te4 is now being broadly scrutinized by theoretical and experimental methods. 6,19,[21][22][23][24][25][26] In this joint experimental and theoretical study, we establish another ternary manganesebismuth telluride, MnBi4Te7, as the first instance of a compound that features both an inverted electronic band structure and an intrinsic net magnetization.…”

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confidence: 99%

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Topological Electronic Structure and Intrinsic Magnetization in MnBi4Te7 : A
Vidal¹,
Zeugner²,
Facio³
et al. 2019
Phys. Rev. X
126
1
65
2
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and Anna Isaeva (anna.isaeva@tu-dresden.de) ¥ These authors contributed equally to this work. 2 Combinations of non-trivial band topology and long-range magnetic order hold promise for realizations of novel spintronic phenomena, such as the quantum anomalous Hall effect and the topological magnetoelectric effect. Following theoretical advances material candidates are emerging. Yet, a compound with a band-inverted electronic structure and an intrinsic net magnetization remains unrealized. MnBi2Te4 is a candidate for the first antiferromagnetic topological insulator and the progenitor of a modular (Bi2Te3)n(MnBi2Te4) series. For n = 1, we confirm a non-stoichiometric composition proximate to MnBi4Te7 and establish an antiferromagnetic state below 13 K followed by a state with net magnetization and ferromagnetic-like hysteresis below 5 K. Angleresolved photoemission experiments and density-functional calculations reveal a topological surface state on the MnBi4Te7(0001) surface, analogous to the non-magnetic parent compound Bi2Te3. Our results render MnBi4Te7 as a band-inverted material with an intrinsic net magnetization and a complex magnetic phase diagram providing a versatile platform for the realization of different topological phases.Soon after the discovery of topological insulators (TIs) a decade ago 1 , the role of magnetism and its potential to modify the electronic topology emerged as a central issue in the field of topological materials. Magnetic degrees of freedom provide a powerful means of tuning the decisive characteristic of any topological system: its symmetry. By now it is recognized that the interplay between magnetic order and electronic topology offers a rich playground for the realization of exotic topological states of matter, such as the quantum anomalous Hall state, 2,3 the axion insulator state, 4-6 and magnetic Weyl and nodal lines semimetals, 7-9 enabling in turn different routes to spintronic applications. [10][11][12] The non-trivial topology in paradigmatic TIs like Bi2Te3 is a result of band inversion driven by strong spin-orbit interaction. 13,14 Until recently, the interplay with magnetism in this class of systems has been mostly explored by extrinsic methods, such us doping a known TI

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confidence: 52%

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confidence: 99%

Topological Electronic Structure and Intrinsic Magnetization in MnBi4Te7 : A
Vidal¹,
Zeugner²,
Facio³
et al. 2019
Phys. Rev. X
126
1
65
2
View full text Add to dashboard Cite

show abstract

“…Hence, the synthesis of high-quality MnBi2Te4 single crystals with well-defined AFM order is essential to the research of magnetic topological material, as well as to the potential applications, such as dissipationless transport and low-power electronics. According to previous studies, MnBi2Te4 can be synthesized through a number of approaches, but lacks of the evidence of high purity crystalline samples 29 . During the preparation of this paper, we noticed that there have been several publications concerning the growth and characterizations of MnBi2Te4 crystals 20,30,31 .…”

Section: Introductionmentioning

confidence: 99%

Antiferromagnetic topological insulator MnBi₂Te₄: synthesis and magnetic properties

Liu

et al. 2020

Phys. Chem. Chem. Phys.

107

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Recently, MnBi2Te4 has been discovered as the first intrinsic antiferromagnetic topological insulator (AFM TI), and will become a promising material to discover exotic topological quantum phenomena. In this work, we have realized the successful synthesis of high-quality MnBi2Te4 single crystals by solid-state reactions. The as-grown MnBi2Te4 single crystal exhibits a van der Waals layered structure, which is composed of septuple Te-Bi-Te-Mn-Te-Bi-Te sequences as determined by powder X-ray diffraction (PXRD) and high-resolution high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM). The magnetic order below 25 K as a consequence of A-type antiferromagnetic interaction between Mn layers in the MnBi2Te4 crystal suggests the unique interplay between antiferromagnetism and topological quantum states. The transport measurements of MnBi2Te4 single crystals further confirm its magnetic transition. Moreover, the unstable surface of MnBi2Te4, which is found to be easily oxidized in air, deserves attention for onging research on few-layer samples. This study on the first AFM TI of MnBi2Te4 will guide the future research on other potential candidates in the MBixTey family (M = Ni, V, Ti, etc.).

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“…We propose here that, instead of the Mn atoms arranging themselves as randomly dispersed dopants in the Bi 2 Se 3 lattice, this growth produces an until-now unstudied material, Bi 2 MnSe 4 , in the form of a self-assembled layered heterostructure with Bi 2 Se 3 in a nearperiodic self-assembled heterostructure consisting of layers of Bi 2 Se 3 separated by single-layer Bi 2 MnSe 4 crystals. Bi 2 MnSe 4 is formed by the intergrowth of {111} planes of rock-salt MnSe with QLs of Bi 2 Se 3 , analogous to the growth of homologous compound Bi 2 MnTe 4 [31].…”

Section: Introductionmentioning

confidence: 99%

Molecular beam epitaxy growth and structure of self-assembled Bi₂Se₃/Bi₂MnSe₄ multilayer heterostructures

Hagmann

Chowdhury

et al. 2017

New J. Phys.

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We demonstrate that the introduction of an elemental beam of Mn during the molecular beam epitaxial growth of Bi 2 Se 3 results in the formation of layers of Bi 2 MnSe 4 that intersperse between layers of pure Bi 2 Se 3 . This study revises the assumption held by many who study magnetic topological insulators (TIs) that Mn incorporates randomly at Bi-substitutional sites during epitaxial growth of Mn:Bi 2 Se 3 . Here, we report the formation of thin film magnetic TI Bi 2 MnSe 4 with stoichiometric composition that grows in a self-assembled multilayer heterostructure with layers of Bi 2 Se 3 , where the number of Bi 2 Se 3 layers separating the single Bi 2 MnSe 4 layers is approximately defined by the relative arrival rate of Mn ions to Bi and Se ions during growth, and we present its compositional, structural, and electronic properties. We support a model for the epitaxial growth of Bi 2 MnSe 4 in a near-periodic self-assembled layered heterostructure with Bi 2 Se 3 with corresponding theoretical calculations of the energetics of this material and those of similar compositions. Computationally derived electronic structure of these heterostructures demonstrates the existence of topologically nontrivial surface states at sufficient thickness. New J. Phys. 19 (2017) 085002 J A Hagmann et al

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Crystal structure, properties and nanostructuring of a new layered chalcogenide semiconductor, Bi2MnTe4

Cited by 176 publications

References 40 publications

Topological Electronic Structure and Intrinsic Magnetization in MnBi4Te7 : A
Vidal¹,
Zeugner²,
Facio³
et al. 2019
Phys. Rev. X
126
1
65
2
View full text Add to dashboard Cite

Topological Electronic Structure and Intrinsic Magnetization in MnBi4Te7 : A
Vidal¹,
Zeugner²,
Facio³
et al. 2019
Phys. Rev. X
126
1
65
2
View full text Add to dashboard Cite

Antiferromagnetic topological insulator MnBi₂Te₄: synthesis and magnetic properties

Molecular beam epitaxy growth and structure of self-assembled Bi₂Se₃/Bi₂MnSe₄ multilayer heterostructures

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Crystal structure, properties and nanostructuring of a new layered chalcogenide semiconductor, Bi2MnTe4

Cited by 176 publications

References 40 publications

Topological Electronic Structure and Intrinsic Magnetization in MnBi4Te7 : A Vidal1, Zeugner2, Facio3 et al. 2019Phys. Rev. X1261652View full textAdd to dashboardCite

Topological Electronic Structure and Intrinsic Magnetization in MnBi4Te7 : A Vidal1, Zeugner2, Facio3 et al. 2019Phys. Rev. X1261652View full textAdd to dashboardCite

Antiferromagnetic topological insulator MnBi2Te4: synthesis and magnetic properties

Molecular beam epitaxy growth and structure of self-assembled Bi2Se3/Bi2MnSe4 multilayer heterostructures

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Topological Electronic Structure and Intrinsic Magnetization in MnBi4Te7 : A
Vidal¹,
Zeugner²,
Facio³
et al. 2019
Phys. Rev. X
126
1
65
2
View full text Add to dashboard Cite

Topological Electronic Structure and Intrinsic Magnetization in MnBi4Te7 : A
Vidal¹,
Zeugner²,
Facio³
et al. 2019
Phys. Rev. X
126
1
65
2
View full text Add to dashboard Cite

Antiferromagnetic topological insulator MnBi₂Te₄: synthesis and magnetic properties

Molecular beam epitaxy growth and structure of self-assembled Bi₂Se₃/Bi₂MnSe₄ multilayer heterostructures