Crystal structure of the new ternary indide Pr11Ge5.21In4.79

Abstract

The new ternary indide Pr 11 Ge 5.21 In 4.79 was synthesized from the elements by arc-melting and subsequent annealing at 870 K. Single crystals were grown by a special annealing procedure in a sealed tantalum container in a resistance furnace. The crystal structure of the compound was determined by X-ray diffraction on a single crystal: Sm 11 Ge 4 In 6 structure type, I4/mmm, tI84, а = 1185.6(2) pm, c = 1654.8(3) pm, wR2 = 0.0623, 1051 F 2 values, 41 variables. Crystal chemistry in Pr 11 Ge 5.21 In 4.79 is discussed from a geometrical point of view.