Crystal structure of the CuIn7Se11 compound

Gulay, L. D.; Ivashchenko, I. A.; Zmiy, O. F.; Olekseyuk, I. D.

doi:10.1016/j.jallcom.2004.03.117

Cited by 14 publications

(15 citation statements)

References 4 publications

(6 reference statements)

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“…Figure 1e shows the x-ray diffraction patterin of as fabricated CIS crystal. The x-ray pattern matched very well with previous study, [36] and the three major diffration peaks are label as former study. [23] All this evidence confirms the successful synthesis of high quality CIS crystals.…”

Section: Resultssupporting

confidence: 88%

“…[ 23,36] CIS atomic layers were exfoliated from the bulk crystal by the Scotch tape exfoliation method and transferred onto a silicon wafer with a 285 nm thermal oxidation layer. .…”

Section: Resultsmentioning

confidence: 99%

“…Figure 1a shows the side view of a model CIS lattice structure. [36] The inter-layer distance in this material is 1.6 nm and the lattice constant along the a-axis is 0.40 nm. [23,36] The crystal structure is similar to that of CuIn 5 Se 8 , and the deviation in stoichiometry of the CIS is compensated by ordered or disordered vacancies.…”

Section: Introductionmentioning

confidence: 92%

“…[36] The inter-layer distance in this material is 1.6 nm and the lattice constant along the a-axis is 0.40 nm. [23,36] The crystal structure is similar to that of CuIn 5 Se 8 , and the deviation in stoichiometry of the CIS is compensated by ordered or disordered vacancies. [37] Based on previous studies of CuSe 5 Se 8 , and sharing an identical structure with CuSe 7 Se 11 , the van der Waals gap for CIS is between Cu and the neighboring In atoms.…”

Section: Introductionmentioning

confidence: 92%

“…The lattice constant is measured to be 0.40 nm along the a-axis which agrees well with the previously reported value. [36] d. The atomic force microscopy (AFM) height profile of mechanically exfoliated CIS flake. The inset in the upper left corner shows the optical image of the flake under study.…”

Section: Supporting Informationmentioning

confidence: 99%

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Ternary CuIn₇Se₁₁: Towards Ultra‐Thin Layered Photodetectors and Photovoltaic Devices

et al. 2014

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2D materials have been widely studied over the past decade for their potential applications in electronics and optoelectronics. In these materials, elemental composition plays a critical role in defining their physical properties. Here we report the first successful synthesis of individual high quality CuIn 7 Se 11 (CIS) ternary 2D layers and demonstrate their potential use in photodetection applications. Photoconductivity measurements show an indirect bandgap of 1.1 eV for few-layered CIS, an external quantum efficiency of 88.0 % with 2 V bias across 2 µm channel with and a signal-to-noise ratio larger than 95 dB. By judicious choice of electrode materials, we demonstrate the possibility of layered CIS-based 2 2D photovoltaic devices. This study examines this ternary 2D layered system for the first time, demonstrating the clear potential for layered CIS in 2D material-based optoelectronic device applications.

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Section: Resultssupporting

confidence: 88%

“…[ 23,36] CIS atomic layers were exfoliated from the bulk crystal by the Scotch tape exfoliation method and transferred onto a silicon wafer with a 285 nm thermal oxidation layer. .…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 92%

Section: Introductionmentioning

confidence: 92%

Section: Supporting Informationmentioning

confidence: 99%

See 3 more Smart Citations

Ternary CuIn₇Se₁₁: Towards Ultra‐Thin Layered Photodetectors and Photovoltaic Devices

et al. 2014

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Ultralow Lattice Thermal Conductivity and Extraordinary Thermoelectric Performance in Highly Disordered CuIn₇Se₁₁ Layered Compound

Yang,

Zi,

Liu

et al. 2023

Adv Funct Materials

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Since the lattice thermal conductivity of thermoelectric materials is a relatively independent parameter, exploring semiconductor materials with intrinsically low lattice thermal conductivity is an important direction in the field of thermoelectric research. Herein, a high figure of merit ZT of 1.23 at 873 K and an exceptionally low lattice thermal conductivity of 0.18 W m−1 K−1 are realized in the n‐type CuIn7Se11 compound for the first time. The weak In─Se chemical bonds induce strong coupling between acoustic phonon and optical phonon with low frequency, leading to low sound velocity. The highly disordered configuration of Cu, In, and vacancies at In2, In3, and M sites, in conjunction with atomic‐scale slips and flips intensify phonon scattering. All these result in an intrinsically low thermal conductivity of the CuIn7Se11 compound. DFT calculation reveals that the density of states at the bottom of the conduction band is mainly contributed by the coupling between 4p orbitals of Se atoms and 5s orbitals of In atoms, featuring with a small effective mass. This small effective mass of charge carrier renders the CuIn7Se11 compound high carrier mobility of 435 cm2 V−1 s−1 at 300 K. Consequently, the CuIn7Se11 compound possesses an extraordinary thermoelectric performance

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Crystal Structure of the CuIn₇Se₁₁ Compound.

et al. 2005

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Crystal structure of the CuIn7Se11 compound

Cited by 14 publications

References 4 publications

Ternary CuIn₇Se₁₁: Towards Ultra‐Thin Layered Photodetectors and Photovoltaic Devices

Ternary CuIn₇Se₁₁: Towards Ultra‐Thin Layered Photodetectors and Photovoltaic Devices

Ultralow Lattice Thermal Conductivity and Extraordinary Thermoelectric Performance in Highly Disordered CuIn₇Se₁₁ Layered Compound

Crystal Structure of the CuIn₇Se₁₁ Compound.

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Crystal structure of the CuIn7Se11 compound

Cited by 14 publications

References 4 publications

Ternary CuIn7Se11: Towards Ultra‐Thin Layered Photodetectors and Photovoltaic Devices

Ternary CuIn7Se11: Towards Ultra‐Thin Layered Photodetectors and Photovoltaic Devices

Ultralow Lattice Thermal Conductivity and Extraordinary Thermoelectric Performance in Highly Disordered CuIn7Se11 Layered Compound