2017
DOI: 10.1016/j.matchemphys.2017.01.038
|View full text |Cite
|
Sign up to set email alerts
|

Crystal structure, magnetization, 125Te NMR, and Seebeck coefficient of Ge49Te50R1 (R = La, Pr, Gd, Dy, and Yb)

Abstract: GeTe, a self-doping semiconductor, is a well-known base compound for thermoelectric and phase-change materials. It is known, that replacement of Ge in Ag 6.5 Sb 6.5 Ge 37 Te 50 (TAGS-85) material by rare earth Dy significantly enhances both the power factor and thermoelectric figure of merit. Here we demonstrate how replacement of Ge in GeTe by rare earths with different atomic size and localized magnetic moments affect XRD patterns, magnetization, 125 Te NMR spectra and spin-lattice relaxation, and the Seebec… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2018
2018
2021
2021

Publication Types

Select...
4

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(1 citation statement)
references
References 27 publications
(47 reference statements)
0
1
0
Order By: Relevance
“…A similar method was also used by Sen et al [17] to study amorphous and fcc Ge1Sb2Te4 and Ge2Sb2Te5, by Levin et al and Cui et al [18][19][20][21][22][23] [24] for GeTe based materials and Bi2Te3 and by Njegic et al [25] for the PbTe-GeTe binary and PbTe-SnTe binary. It was also used by Garaga et al [26] on Te oxides but using a CPMG sequence which allows to obtain a better sensitivity.…”
Section: Introductionmentioning
confidence: 99%
“…A similar method was also used by Sen et al [17] to study amorphous and fcc Ge1Sb2Te4 and Ge2Sb2Te5, by Levin et al and Cui et al [18][19][20][21][22][23] [24] for GeTe based materials and Bi2Te3 and by Njegic et al [25] for the PbTe-GeTe binary and PbTe-SnTe binary. It was also used by Garaga et al [26] on Te oxides but using a CPMG sequence which allows to obtain a better sensitivity.…”
Section: Introductionmentioning
confidence: 99%