Crystal structure and microstructure of lead zirconate titanate (PZT) thin films with various Zr/Ti ratios grown by hybrid processing

Dependence of lattice distortion of monoclinic phase on film thickness in Pb(Zr0.58Ti0.42)O3 thin films

“…Especially when the film thickness is less than 250 nm, the peak is more obviously separated into at least two peaks. It was found that the T phase was seldom observed in PZT58/42 at room temperature [13,16,25]. Thus, the phase in the current PZT58/42 thin films may be R phase, M phase or R + M phases.…”

Effect of bottom electrode and resistive layer on the dielectric and ferroelectric properties of sol–gel derived BiFeO3 thin films

“…The difference in morphology is most likely stemmed from the La 2 O 3 layer in S1. The microstructure of S1 may well resemble the rosette structure observed in Zr-rich PZT films [29][30][31]. Since the rosette structures are usually formed from a low nucleation rate, this may suggest that the clusters of grains found in the films are a result of different nucleation rates [30].…”

Evaluation of the differential capacitance for ferroelectric materials using either charge-based or energy-based expressions

“…In summary, what we have learned is that there is a basic constraint equation that determines when a material characterized by a permittivity, has its differential capacitance go negative, and that for a ferroelectric material, [49][50][51][52][53][54][55][56][57][58][59][60][61][62][63][64][65] no matter what the viewpoint, energy or current (or charge), this value can never be negative and that this may occur for either sign of the dc capacitance (see Appendix A). Furthermore, there is another similar constraint equation for obtaining positive differential energy capacitance, and that this, as before, may occur for either sign of the dc capacitance.…”