Crystal structure and dielectric properties of layered perovskite-like solid solutions Bi3–x
                            Y
                                x
                            TiNbO9 (x = 0, 0.1, 0.2, 0.3) with high Curie temperature

Zubkov, S. V.; Власенко, В. Г.

doi:10.1134/s1063783417120332

Cited by 19 publications

(10 citation statements)

References 26 publications

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“…11,12 A priority task is to determine correlations between the composition, structure, and dielectric characteristics of new APs. As was shown in our previous study, 13 the modification of the composition of wellknown AP by means of the addition of small amounts of donor dopants, such as W 6þ , V 5þ , Re 7þ , and others, leads to a decrease in the number of oxygen vacancies, a decrease in the leakage current, and an improvement of the piezoelectric properties of APs ceramics. Moreover, there is an increase of the dielectric permittivity of the doped APs, as well as of their Curie temperature T c , even though, to a lesser extent.…”

Section: Introductionsupporting

confidence: 67%

Structure and dielectric properties of solid solutions Bi₇Ti4+xW_xNb1−2x−0.1V0.1O21 (x=0.1−0.4)

Zubkov

2020

J. Adv. Dielect.

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The structural and electrophysical characteristics of a number of solid solutions of layered oxides of the perovskite-type Bi7[Formula: see text]Wx[Formula: see text][Formula: see text][Formula: see text] ([Formula: see text]) are studied. According to X-ray powder diffraction data, all the compounds studied are single-phase and have the structure of Aurivillius phases ([Formula: see text]) with a rhombic crystal lattice (space group I2[Formula: see text]cm, [Formula: see text]). Changes in tetragonal and rhombic distortions of perovskite-like layers in compounds were considered depending on their chemical composition. The temperature dependences of the relative permittivity [Formula: see text] (T) were measured. It was shown that the Curie temperature [Formula: see text] of the perovskite-type oxides Bi7[Formula: see text]Wx[Formula: see text][Formula: see text][Formula: see text] ([Formula: see text]) linearly decreases with increasing parameter [Formula: see text]. The activation energies of charge carriers were obtained in different temperature ranges. It was found that there are three temperature regions with very different activation energies due to the different nature of the charge carriers in the studied compounds. The effect of substitution of [Formula: see text] ions by [Formula: see text] ions is investigated. It was found that for a number of compounds, the substitution of niobium ions by vanadium ions led to an increase in the dielectric constant and a decrease in the dielectric loss tangent.

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Section: Introductionsupporting

confidence: 67%

Structure and dielectric properties of solid solutions Bi₇Ti4+xW_xNb1−2x−0.1V0.1O21 (x=0.1−0.4)

Zubkov

2020

J. Adv. Dielect.

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“…Scientific interest in synthesis and study of new AP compounds is stimulated by numerous examples of their use in various electronic devices, due to their unique physical properties (piezoelectric, ferroelectric, etc.). They exhibit low temperature coefficients of dielectric and piezoelectric losses, as well as low aging temperatures in addition to high Curie temperatures (T C ≤ 965 • C) [11,12].…”

Section: Introductionmentioning

confidence: 99%

Structural and Dielectric Properties of Bi-=SUB=-3-=/SUB=-Ti-=SUB=-1.5-=/SUB=-W-=SUB=-0.5-=/SUB=-O-=SUB=-9-=/SUB=-

Zubkov

Parinov

et al. 2022

Physics of the Solid State

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Layered perovskite-like oxide Bi3Ti1.5W0.5O9 has been synthesized by the method of high-temperature solid-state reaction. The X-ray diffraction study showed that the compound is single-phase and has the structure of the family of Aurivillius phases (AP) with parameters close to the orthorhombic unit cell corresponding to the space group A21am. The temperature dependences of the relative permittivity ε/ε0 and the loss tangent tgsigma are measured at different frequencies. For the synthesized compound, the piezoelectric modulus d33 was measured. The microstructure of Bi3Ti1.5W0.5O9 has been obtained. Keywords: Aurivillius phases, Bi3Ti1.5W0.5O9, activation energy Ea, Curie temperature TC, piezoelectric modulus d33.

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“…For example, S.V. Zubkov doped Gd elements in BTN, which can increase the Curie temperature to 950 °C [ 22 ]. Gd element was also found to provide high insulation and low loss [ 23 ].…”

Section: Introductionmentioning

confidence: 99%

Microstructures and Electrical Conduction Behaviors of Gd/Cr Codoped Bi3TiNbO9 Aurivillius Phase Ceramic

Zhou

Wang

et al. 2021

Materials

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In this work, a kind of Gd/Cr codoped Bi3TiNbO9 Aurivillius phase ceramic with the formula of Bi2.8Gd0.2TiNbO9 + 0.2 wt% Cr2O3 (abbreviated as BGTN−0.2Cr) was prepared by a conventional solid-state reaction route. Microstructures and electrical conduction behaviors of the ceramic were investigated. XRD and SEM detection found that the BGTN−0.2Cr ceramic was crystallized in a pure Bi3TiNbO9 phase and composed of plate-like grains. A uniform element distribution involving Bi, Gd, Ti, Nb, Cr, and O was identified in the ceramic by EDS. Because of the frequency dependence of the conductivity between 300 and 650 °C, the electrical conduction mechanisms of the BGTN−0.2Cr ceramic were attributed to the jump of the charge carriers. Based on the correlated barrier hopping (CBH) model, the maximum barrier height WM, dc conduction activation energy Ec, and hopping conduction activation energy Ep were calculated with values of 0.63 eV, 1.09 eV, and 0.73 eV, respectively. Impedance spectrum analysis revealed that the contribution of grains to the conductance increased with rise in temperature; at high temperatures, the conductance behavior of grains deviated from the Debye relaxation model more than that of grain boundaries. Calculation of electrical modulus further suggested that the degree of interaction between charge carriers β tended to grow larger with rising temperature. In view of the approximate relaxation activation energy (~1 eV) calculated from Z’’ and M’’ peaks, the dielectric relaxation process of the BGTN−0.2Cr ceramic was suggested to be dominated by the thermally activated motion of oxygen vacancies as defect charge carriers. Finally, a high piezoelectricity of d33 = 18 pC/N as well as a high resistivity of ρdc = 1.52 × 105 Ω cm at 600 °C provided the BGTN−0.2Cr ceramic with promising applications in the piezoelectric sensors with operating temperature above 600 °C.

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Crystal structure and dielectric properties of layered perovskite-like solid solutions Bi3–x Y x TiNbO9 (x = 0, 0.1, 0.2, 0.3) with high Curie temperature

Cited by 19 publications

References 26 publications

Structure and dielectric properties of solid solutions Bi₇Ti4+xW_xNb1−2x−0.1V0.1O21 (x=0.1−0.4)

Structure and dielectric properties of solid solutions Bi₇Ti4+xW_xNb1−2x−0.1V0.1O21 (x=0.1−0.4)

Structural and Dielectric Properties of Bi-=SUB=-3-=/SUB=-Ti-=SUB=-1.5-=/SUB=-W-=SUB=-0.5-=/SUB=-O-=SUB=-9-=/SUB=-

Microstructures and Electrical Conduction Behaviors of Gd/Cr Codoped Bi3TiNbO9 Aurivillius Phase Ceramic

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Crystal structure and dielectric properties of layered perovskite-like solid solutions Bi3–x Y x TiNbO9 (x = 0, 0.1, 0.2, 0.3) with high Curie temperature

Cited by 19 publications

References 26 publications

Structure and dielectric properties of solid solutions Bi7Ti4+xWxNb1−2x−0.1V0.1O21 (x=0.1−0.4)

Structure and dielectric properties of solid solutions Bi7Ti4+xWxNb1−2x−0.1V0.1O21 (x=0.1−0.4)

Structural and Dielectric Properties of Bi-=SUB=-3-=/SUB=-Ti-=SUB=-1.5-=/SUB=-W-=SUB=-0.5-=/SUB=-O-=SUB=-9-=/SUB=-

Microstructures and Electrical Conduction Behaviors of Gd/Cr Codoped Bi3TiNbO9 Aurivillius Phase Ceramic

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Structure and dielectric properties of solid solutions Bi₇Ti4+xW_xNb1−2x−0.1V0.1O21 (x=0.1−0.4)

Structure and dielectric properties of solid solutions Bi₇Ti4+xW_xNb1−2x−0.1V0.1O21 (x=0.1−0.4)