Controlling the polymorph formation in organic semiconductor
thin
films by the choice of processing parameters is a key factor for targeted
device performance. Small molecular semiconductors such as the prototypical
anilino squaraine compound with branched butyl chains as terminal
functionalization (SQIB) allow both solution and vapor phase deposition
methods. SQIB has been considered for various photovoltaic applications
mainly as amorphous isotropic thin films due to its broad absorption
within the visible to deep-red spectral range. The two known crystalline
polymorphs adopting a monoclinic and orthorhombic crystal phase show
characteristic Frenkel excitonic spectral signatures of overall H-type
and J-type aggregates, respectively, with additional pronounced Davydov
splitting. This gives a recognizable polarized optical response of
crystalline thin films suitable for identification of the polymorphs.
Both phases emerge with a strongly preferred out-of-plane and rather
random in-plane orientation in spin-casted thin films depending on
subsequent thermal annealing. By contrast, upon vapor deposition on
dielectric and conductive substrates, such as silicon dioxide, potassium
chloride, graphene, and gold, the polymorph expression depends basically
on the choice of growth substrate. The same pronounced out-of-plane
orientation is adopted in all crystalline cases, but with a surface
templated in-plane alignment in case of crystalline substrates. Strikingly,
the amorphous isotropic thin films obtained by vapor deposition cannot
be crystallized by thermal postannealing, which is a key feature for
the spin-casted thin films, here monitored by polarized in situ microscopy.
Combining X-ray diffraction, atomic force microscopy, ellipsometry,
and polarized spectro-microscopy, we identify the processing-dependent
evolution of the crystal phases, correlating morphology and molecular
orientations within the textured SQIB films.