Crystal Phase-Selective Epitaxy of Rutile and Anatase Nb-Doped TiO<sub>2</sub>Films on a GaN Template by the Helicon-Wave-Excited-Plasma Sputtering Epitaxy Method

Hazu, K.; Fouda, A. N.; Nakayama, Tokuyuki; Tanaka, A.; Chichibu, S. F.

doi:10.1143/apex.3.091102

Cited by 14 publications

(6 citation statements)

References 16 publications

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“…Rutile TiO 2 with c-axis in-plane orientation has previously been grown on various substrates having hexagonal/trigonal symmetry. [32][33][34][35][36] This is possible because the rutile (100) plane contains the face of the distorted Ti-O octahedron, which is approximately three-fold symmetric. It should therefore be possible to grow epitaxial NbO 2 with the rutile c-axis in plane by growing on substrates with hexagonal/trigonal symmetry.…”

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confidence: 99%

Band gap of epitaxial in-plane-dimerized single-phase NbO₂films

et al. 2014

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Band gap of epitaxial in-plane-dimerized single-phase NbO₂films

et al. 2014

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“…17,21 The quasipseudobinary NbO 2 mole fraction, x, of the sintered targets were varied between 0.018 and 0.093. 17,21 The quasipseudobinary NbO 2 mole fraction, x, of the sintered targets were varied between 0.018 and 0.093.…”

Section: Methodsmentioning

confidence: 99%

“…However, precise mechanisms for how electrical conductivity emerges in these films are not fully understood at present. 21 In this article, critical importance of stoichiometry control for depositing transparent A-TiO 2 : Nb films on alkaline-free glass substrates using postdeposition annealing-free HWPS method is described. Indeed, TiO 2 films have been deposited using sputtering techniques.…”

Section: Introductionmentioning

confidence: 99%

Transparent semiconducting Nb-doped anatase TiO2 films deposited by helicon-wave-excited-plasma sputtering

Fouda¹,

Hazu²,

Haemori³

et al. 2011

Journal of Vacuum Science & Technology B, Nanotechnology an

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Electrical and optical properties of Nb-doped TiO 2 films deposited by dc magnetron sputtering using slightly reduced Nb-doped TiO 2 − x ceramic targets J. Vac. Sci. Technol. A 28, 851 (2010); 10.1116/1.3358153 rf magnetron sputter deposition of transparent conducting Nb-doped Ti O 2 films on Sr Ti O 3 Transparent and semitransparent conducting film deposition by reactive-environment, hollow cathode sputtering A transparent metal: Nb-doped anatase Ti O 2The authors report stoichiometry control and postdeposition annealing-free fabrication of Nb-doped transparent anatase TiO 2 ͑A-TiO 2 :Nb͒ films on alkaline-free glass substrates by helicon-wave-excited-plasma sputtering. The films tended to crystallize in the stable electrically semi-insulating rutile phase. However, although the appropriate deposition condition window was narrow, precise stoichiometry control using near-reducing ambient, namely, the deposition temperature higher than 450°C and O 2 partial pressure ͑P O 2 ͒ in the range between 5 ϫ 10 −4 and 1 ϫ 10 −2 Pa, enabled the deposition of a high refractive index semiconducting anatase phase. The electron concentration of the A-TiO 2 : Nb films increased with increasing Nb concentration up to Ti 0.907 Nb 0.093 O 2 . The results indicate that the Nb 5+ donor on the Ti 4+ site can be activated under near-reducing atmosphere where unwanted compensating defects may be passivated. As a result, anatase Ti 0.907 Nb 0.093 O 2 film deposited at 500°C and P O 2 =5ϫ 10 −4 Pa exhibited a resistivity of 3.4ϫ 10 −3 ⍀ cm and an optical transmittance higher than 90%. The refractive index of A-TiO 2 :Nb was found to be approximately 2.63 at 450 nm with spectroscopic ellipsometry, which is comparable to the InGaN alloys.

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“…13) Later, growths of atomically-flat ZnO 14) and Mg x Zn 1¹x O 2) epitaxial films on Zn-polar (0001) ZnO substrates were successfully exemplified using a polycrystalline ZnO target synthesized by chemical vapor transport (CVT) provided by Eagle Picher and thermally synthesized Mg x Zn 1¹x O targets, respectively. Furthermore, crystal phase-selective epitaxy of rutile/anatase TiO 2 was also demonstrated 15) using HWPSE.…”

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Homoepitaxial growth of ZnO films with reduced impurity concentrations by helicon-wave-excited-plasma sputtering epitaxy using a crystalline ZnO target prepared by hydrothermal technique

Furusawa

Nakasawa

Ishikawa

et al. 2014

Jpn. J. Appl. Phys.

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Heat dissipation is one of the most important issues for the reliability of electronic equipment. Boiling can be a very efficient heat transfer mechanism when used to face with the electronic technology needs of efficient and compact heat sinks. Recently, cellular structured materials both stochastic and periodic, particularly open cell metal foams, have been proposed as possible enhanced surfaces to lower the junction temperatures at high heat fluxes. Up today, most of the research on metal foams only regards single phase flow, whereas the two phase flow is still almost unexplored. This paper presents an experimental study on the heat transfer of R134a during flow boiling inside a 5 PPI (Pores Per linear Inch) copper foam, which is 5 mm high, 10 mm wide and 200 mm long, and it is brazed on a 10 mm thick copper plate. The experimental measurements were carried out by imposing three different heat fluxes (50, 75, and 100 kW m -2 ) and by varying the refrigerant mass velocity between 50 and 200 kg m -2 s -1 and the vapour quality from 0.2 to 0.90, at constant saturation temperature (30°C). The effects of the refrigerant mass flow rate, heat flux and vapour quality on the heat transfer coefficient, dry out phenomenon, and pressure drop are studied.

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Crystal Phase-Selective Epitaxy of Rutile and Anatase Nb-Doped TiO₂Films on a GaN Template by the Helicon-Wave-Excited-Plasma Sputtering Epitaxy Method

Cited by 14 publications

References 16 publications

Band gap of epitaxial in-plane-dimerized single-phase NbO₂films

Band gap of epitaxial in-plane-dimerized single-phase NbO₂films

Transparent semiconducting Nb-doped anatase TiO2 films deposited by helicon-wave-excited-plasma sputtering

Homoepitaxial growth of ZnO films with reduced impurity concentrations by helicon-wave-excited-plasma sputtering epitaxy using a crystalline ZnO target prepared by hydrothermal technique

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Crystal Phase-Selective Epitaxy of Rutile and Anatase Nb-Doped TiO2Films on a GaN Template by the Helicon-Wave-Excited-Plasma Sputtering Epitaxy Method

Cited by 14 publications

References 16 publications

Band gap of epitaxial in-plane-dimerized single-phase NbO2films

Band gap of epitaxial in-plane-dimerized single-phase NbO2films

Transparent semiconducting Nb-doped anatase TiO2 films deposited by helicon-wave-excited-plasma sputtering

Homoepitaxial growth of ZnO films with reduced impurity concentrations by helicon-wave-excited-plasma sputtering epitaxy using a crystalline ZnO target prepared by hydrothermal technique

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Product

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Crystal Phase-Selective Epitaxy of Rutile and Anatase Nb-Doped TiO₂Films on a GaN Template by the Helicon-Wave-Excited-Plasma Sputtering Epitaxy Method

Band gap of epitaxial in-plane-dimerized single-phase NbO₂films

Band gap of epitaxial in-plane-dimerized single-phase NbO₂films