Crystal phase engineering in self-catalyzed GaAs and GaAs/GaAsSb nanowires grown on Si(111)

Munshi, A. Mazid; Dheeraj, Dasa L.; Todorović, Jelena; Helvoort, Antonius T. J. van; Weman, H.; Fimland, B. O.

doi:10.1016/j.jcrysgro.2013.03.004

Cited by 52 publications

(63 citation statements)

References 44 publications

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“…By changing the droplet size, they demonstrated the reversible switch of the GaAs NWs between WZ and ZB crystal structure. Similar results are also reported by Munshi et al [196]. Additionally, Yu et al suggested that the shift of the TPL along the sidewall can cause the defects formation ( figure 11(b)) [197], which is supported by their observation of the appearance of a defect-section between the ZB and WZ segments during their Ga droplet consumption ( figure 11(c)).…”

Section: Stacking Faults and Crystal Structure Controlsupporting

confidence: 82%

Elongated nanostructures for radial junction solar cells

et al. 2013

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In solar cell technology, the current trend is to thin down the active absorber layer. The main advantage of a thinner absorber is primarily the reduced consumption of material and energy during production. For thin film silicon (Si) technology, thinning down the absorber layer is of particular interest since both the device throughput of vacuum deposition systems and the stability of the devices are significantly enhanced. These features lead to lower cost per installed watt peak for solar cells, provided that the (stabilized) efficiency is the same as for thicker devices. However, merely thinning down inevitably leads to a reduced light absorption. Therefore, advanced light trapping schemes are crucial to increase the light path length. The use of elongated nanostructures is a promising method for advanced light trapping. The enhanced optical performance originates from orthogonalization of the light's travel path with respect to the direction of carrier collection due to the radial junction, an improved anti-reflection effect thanks to the three-dimensional geometric configuration and the multiple scattering between individual nanostructures. These advantages potentially allow for high efficiency at a significantly reduced quantity and even at a reduced material quality, of the semiconductor material. In this article, several types of elongated nanostructures with the high potential to improve the device performance are reviewed. First, we briefly introduce the conventional solar cells with emphasis on thin film technology, following the most commonly used fabrication techniques for creating nanostructures with a high aspect ratio. Subsequently, several representative applications of elongated nanostructures, such as Si nanowires in realistic photovoltaic (PV) devices, are reviewed. Finally, the scientific challenges and an outlook for nanostructured PV devices are presented.

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Section: Stacking Faults and Crystal Structure Controlsupporting

confidence: 82%

Elongated nanostructures for radial junction solar cells

et al. 2013

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“…In most of the cases, the Au‐assisted vapor–liquid–solid (VLS) mechanism has been utilized for the epitaxial growth of the NWs using various techniques including metal‐organic vapor phase epitaxy (MOVPE) 84‐89, chemical vapor deposition (CVD) 90, 91, molecular beam epitaxy (MBE) 92–94, chemical beam epitaxy (CBE) 95, 96, laser ablation 97–99 and so on. However, partly due to the concern of Au incorporation in the grown material, other alternatives such as self‐catalyzed 100–106 and catalyst‐free 107–111 growth techniques have been extensively studied in recent years. The understanding of the NW growth mechanisms and the systematic tuning of the growth parameters have enabled the growth of NWs with precise control of their crystal structure 106, 112–121, position 122–125, axial and radial heterostructures 27, 31, 126, as well as formation of quantum dots (QDs) within the NW 127–130.…”

Section: Semiconductor Nws On Graphene Layersmentioning

confidence: 99%

“…However, partly due to the concern of Au incorporation in the grown material, other alternatives such as self‐catalyzed 100–106 and catalyst‐free 107–111 growth techniques have been extensively studied in recent years. The understanding of the NW growth mechanisms and the systematic tuning of the growth parameters have enabled the growth of NWs with precise control of their crystal structure 106, 112–121, position 122–125, axial and radial heterostructures 27, 31, 126, as well as formation of quantum dots (QDs) within the NW 127–130. All these advanced epitaxial synthesis techniques can potentially be also adapted for NWs grown on graphene substrates.…”

Section: Semiconductor Nws On Graphene Layersmentioning

confidence: 99%

Advances in semiconductor nanowire growth on graphene

Munshi

Weman

2013

Physica Rapid Research Ltrs

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Here we review the recent research activities on the epitaxial growth of semiconductor nanowires (NWs) on graphene substrates. Semiconductor NWs with quasi one‐dimensional structure have become an active research field due to their various interesting physical properties and potentials for future electronic and optoelectronic device applications, such as transistors, sensors, solar cells, light emitting diodes, and lasers. At almost the same time graphene, a two‐dimensional material made of carbon, was discovered and has gained an ever increasing interest during the last few years owing to its remarkable properties, including excellent electrical conductivity, optical transparency, and mechanical strength and flexibility. A hybrid structure by epitaxially growing semiconductor NWs on graphene could provide a new avenue for the development of future advanced NW‐based flexible electronic and optoelectronic devices. We address the challenges for the growth of semiconductor NWs on graphene, with a special focus on the III–V semiconductors, and highlight some potential applications of the NW/graphene hybrid system. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Over the past few decades, many III-V semiconductor materials and devices have been grown using molecular beam epitaxy (MBE) methods [90][91][92][93]. The properties of antimonide materials have been studied intensively.…”

Section: Discussionmentioning

confidence: 99%

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

et al. 2017

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Groups III-V semiconductors have received a great deal of attention because of their potential advantages for use in optoelectronic and electronic applications. Gallium antimonide (GaSb) and GaSb-related semiconductors, which exhibit high carrier mobility and a narrow band gap (0.725 eV at 300 K), have been recognized as suitable candidates for high-performance optoelectronics in the mid-infrared range. However, the performances of the resulting devices are strongly dependent on the structural and emission properties of the materials. Enhancement of the crystal quality, adjustment of the alloy components, and improvement of the emission properties have therefore become the focus of research efforts toward GaSb semiconductors. Molecular beam epitaxy (MBE) is suitable for the large-scale production of GaSb, especially for high crystal quality and beneficial optical properties. We review the recent progress in the epitaxy of GaSb materials, including films and nanostructures composed of GaSb-related alloys and compounds. The emission properties of these materials and their relationships to the alloy components and material structures are also discussed. Specific examples are included to provide insight on the common general physical and optical properties and parameters involved in the synergistic epitaxy processes. In addition, the further directions for the epitaxy of GaSb materials are forecasted.

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Crystal phase engineering in self-catalyzed GaAs and GaAs/GaAsSb nanowires grown on Si(111)

Cited by 52 publications

References 44 publications

Elongated nanostructures for radial junction solar cells

Elongated nanostructures for radial junction solar cells

Advances in semiconductor nanowire growth on graphene

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

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