Crystal Growth, Transport, and the Structural and Magnetic Properties of Ln<sub>4</sub>FeGa<sub>12</sub> with Ln = Y, Tb, Dy, Ho, and Er

Drake, Brenton L.; Grandjean, Fernande; Kangas, Michael J.; Okudzeto, Edem K.; Karki, Amar B.; Sougrati, Moulay Tahar; Young, David P.; Long, Gary J.; Chan, Julia Y.

doi:10.1021/ic9013202

Cited by 21 publications

(47 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Because of their specific structure, intermetallic compounds usually exhibit unique physical and chemical properties that are potentially superior to their disordered alloy analogues and the pure metals. Such properties include, for example, magnetoresistance, superconductivity, enhanced catalytic activity, and hydrogen storage capability . Intermetallics and alloys containing Co or Ni and Sn with varying stoichiometry have mostly been studied as anode materials for Li‐ and Na‐ion batteries .…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Intermetallic Co₃Sn₂ and Ni₃Sn₂ Thin Films

Väyrynen

Hatanpää

Mattinen

et al. 2018

Adv Materials Inter

View full text Add to dashboard Cite

crystal structures of the participating metal components. An intermetallic compound is formed when the bonds between the dissimilar atoms are stronger than the bonds between the atoms of the same element.Because of their specific structure, intermetallic compounds usually exhibit unique physical and chemical properties that are potentially superior to their disordered alloy analogues and the pure metals. Such properties include, for example, magnetoresistance, [3,4] superconductivity, [5][6][7] enhanced catalytic activity, [8,9] and hydrogen storage capability. [10] Intermetallics and alloys containing Co or Ni and Sn with varying stoichiometry have mostly been studied as anode materials for Li-and Na-ion batteries. [11][12][13][14][15][16][17][18][19] As ferromagnetic materials, they also show potential for magnetic devices. [20][21][22] Furthermore, intermetallic Co-Sn and Ni-Sn compounds have also been studied for catalytic purposes. [23][24][25][26] For future applications like nanoelectronic devices, it is pivotal to be able to control the thickness and composition of thin films with sub-nanometer accuracy. Atomic layer deposition (ALD) is a thin film preparation method based on repeated, saturative, and irreversible surface reactions between alternately supplied gaseous precursors ensuring self-limiting growth of the desired material. [27,28] Owing to the self-limiting growth mechanism, ALD can be used to deposit uniform thin films over complex structures in a controlled and reproducible manner. No previous reports on the ALD of intermetallic Co 3 Sn 2 or Ni 3 Sn 2 thin films are found in the literature, and the ALD of other intermetallic compounds has also been scarce if existent at all. Intermetallic phases in Pt-In, [29] Pt-Sn, [30] and Ni-Fe [31] systems have been obtained by the postdeposition reduction of the corresponding ALD oxides. There are also some ALD studies on metal alloys, such as Pt-Ir, [32] Pd-Pt, [33][34][35] Ru-Pt, [36] Ru-Co, [37] Co-W, [38,39] Co-Pt, [40] Ru-Mn, [41] and Cu-Mn, [42] but no reports exist on materials exhibiting a specific intermetallic structure. Co-Sn and Ni-Sn with varying stoichiometry, including the intermetallic Co 3 Sn 2 and Ni 3 Sn 2 phases, have generally been prepared by, for example, ball Intermetallics form a versatile group of materials that possess unique properties ranging from superconductivity to giant magnetoresistance. The intermetallic Co-Sn and Ni-Sn compounds are promising materials for magnetic applications as well as for anodes in lithium-and sodium-ion batteries. Herein, a method is presented for the preparation of Co 3 Sn 2 and Ni 3 Sn 2 thin films using diamine adducts of cobalt(II) and nickel(II) chlorides, CoCl 2 (TMEDA) and NiCl 2 (TMPDA) (TMEDA = N,N,N′,N′tetramethylethylenediamine, TMPDA = N,N,N′,N′-tetramethyl-1,3propanediamine) combined with tributyltin hydride. The films are grown by atomic layer deposition (ALD), a technique that enables conformal film deposition with sub-nanometer thickness control. The Co 3 Sn 2 process fulfills the ...

show abstract

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Intermetallic Co₃Sn₂ and Ni₃Sn₂ Thin Films

Väyrynen

Hatanpää

Mattinen

et al. 2018

Adv Materials Inter

View full text Add to dashboard Cite

show abstract

“…The authors have previously reported a detailed discussion for the splitting of the Ga position in the isostructural LnMn x Ga 3 (Ln = Ho−Tm; x < 0.2)[7]. Similar splitting of a Ga site was used in Er 4 Fe 0.67 Ga 12 of the Y 4 PdGa 12 -structure type, where two gallium positions were observed on the unit cell faces[3].…”

mentioning

confidence: 94%

“…), respectively. Ln 4 MGa 12 (Ln = Tb−Er; M = Fe, Pd, and Pt) crystallizes in the Y 4 PdGa 12 -structure type and consists of facesharing LnGa 3 cuboctahedra with corner-sharing MGa 6 octahedra [3,4]. Ln 4 PtGa 12 (Ln = Dy−Er) exhibits large, positive magnetoresistance up to 50 %, 220 %, and 900 % increase in resistance under an applied magnetic field for Dy, Er, and Ho, respectively [4].…”

Section: Introductionmentioning

confidence: 99%

Structural stability and magnetic properties of LnM Ga3 (Ln = Ho, Er; M = Fe, Co; x< 0.2)

et al. 2016

Self Cite

View full text Add to dashboard Cite

Single crystals of LnM x Ga 3 (Ln = Ho, Er; M = Fe, Co; x < 0.2) were grown from a Ga self-flux. The compounds crystallize in a "stuffed" variant of the AuCu 3 -structure type where Fe or Co partially occupies the body-centered position of the unit cell surrounded by six Ga atoms. The insertion of Fe or Co guest atoms into the AuCu 3 -structure type causes a structural change in the host material where chemical pressure is exerted on Ga-Ga contacts surrounding the filled octahedra. This in turn affects the stability of the AuCu 3 -structure type and the intrinsic properties of the materials. With increasing Ho−Ho distances of 4.2355(5), 4.2377(5), and 4.2441(3) Å, HoCo 0.16(2) Ga 3 , HoFe 0.11(1) Ga 3 , and HoFe 0.16(2) Ga 3 order antiferromagnetically with decreasing Néel temperatures of T N = 10.2, 7.2, and 6.5 K, respectively. ErCo 0.06(2) Ga 3 , ErFe 0.06(1) Ga 3 , and ErFe 0.11(2) Ga 3 order antiferromagnetically with Néel temperatures of T N = 3.3, 5.2, and 6.2 K. The magnetic properties are attributed to changes in the coupling strength of local magnetic moment with conduction electrons as a function of transition metal and rare earth.

show abstract

“…Single crystal X-ray diffraction analysis reveals that compound 1 exhibits the 2D pillar-layered coordination framework with meso-helical character constructed from auxiliary ligand TA 2− (that is, pillar) bridging two [Er(HIDC 2− )] n layers (namely, Δ-and Λ-layers), which is the first example of lanthanide coordination framework including imidazole-4,5-dicarboxlylate and terephthalate. Meanwhile, the thermogravimetric analysis shows compound 1 has high thermal stability.Rational design of novel metal-organic compounds has been attracting great interest from chemists in recent years [1][2][3], not only because of their intriguing variety of structures and topologies, but also because of their interesting potential of applications in functional solid materials, ion exchange, catalysis, optical electronic and magnetic devices [4][5][6][7]. At present, the research based on the assembly of metalorganic complexes from the single ligand imidazole-4, 5-dicarboxlylate or terephthalate has been extensively carried out [8][9][10][11][12].…”

mentioning

confidence: 99%

“…Rational design of novel metal-organic compounds has been attracting great interest from chemists in recent years [1][2][3], not only because of their intriguing variety of structures and topologies, but also because of their interesting potential of applications in functional solid materials, ion exchange, catalysis, optical electronic and magnetic devices [4][5][6][7]. At present, the research based on the assembly of metalorganic complexes from the single ligand imidazole-4, 5-dicarboxlylate or terephthalate has been extensively carried out [8][9][10][11][12].…”

mentioning

confidence: 99%

A 2D pillar-layered coordination framework with meso-helix constructed from imidazole-4,5-dicarboxlylate and terephthalate

Wang

Peng

et al. 2010

Inorganic Chemistry Communications

View full text Add to dashboard Cite

Crystal Growth, Transport, and the Structural and Magnetic Properties of Ln₄FeGa₁₂ with Ln = Y, Tb, Dy, Ho, and Er

Cited by 21 publications

References 34 publications

Atomic Layer Deposition of Intermetallic Co₃Sn₂ and Ni₃Sn₂ Thin Films

Atomic Layer Deposition of Intermetallic Co₃Sn₂ and Ni₃Sn₂ Thin Films

Structural stability and magnetic properties of LnM Ga3 (Ln = Ho, Er; M = Fe, Co; x< 0.2)

A 2D pillar-layered coordination framework with meso-helix constructed from imidazole-4,5-dicarboxlylate and terephthalate

Contact Info

Product

Resources

About

Crystal Growth, Transport, and the Structural and Magnetic Properties of Ln4FeGa12 with Ln = Y, Tb, Dy, Ho, and Er

Cited by 21 publications

References 34 publications

Atomic Layer Deposition of Intermetallic Co3Sn2 and Ni3Sn2 Thin Films

Atomic Layer Deposition of Intermetallic Co3Sn2 and Ni3Sn2 Thin Films

Structural stability and magnetic properties of LnM Ga3 (Ln = Ho, Er; M = Fe, Co; x< 0.2)

A 2D pillar-layered coordination framework with meso-helix constructed from imidazole-4,5-dicarboxlylate and terephthalate

Contact Info

Product

Resources

About

Crystal Growth, Transport, and the Structural and Magnetic Properties of Ln₄FeGa₁₂ with Ln = Y, Tb, Dy, Ho, and Er

Atomic Layer Deposition of Intermetallic Co₃Sn₂ and Ni₃Sn₂ Thin Films

Atomic Layer Deposition of Intermetallic Co₃Sn₂ and Ni₃Sn₂ Thin Films