1998
DOI: 10.1016/s0272-8842(97)00042-4
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Crystal growth of silicon nitride whiskers through a VLS mechanism using SiO2Al2O3Y2O3 oxides as liquid phase

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Cited by 46 publications
(18 citation statements)
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“…It may be attributed to their different pore structures. In this study, the obtained composites are highly porous, so vapor phase transport cannot be discounted as a contribution to anisotropicˇ-Si 3 N 4 growth [21]. As stated above, although the incorporation of PAM has no great influence on the porosity of the resultant materials, but significantly changed their pore structures, as shown in Fig.…”
Section: Resultsmentioning
confidence: 68%
“…It may be attributed to their different pore structures. In this study, the obtained composites are highly porous, so vapor phase transport cannot be discounted as a contribution to anisotropicˇ-Si 3 N 4 growth [21]. As stated above, although the incorporation of PAM has no great influence on the porosity of the resultant materials, but significantly changed their pore structures, as shown in Fig.…”
Section: Resultsmentioning
confidence: 68%
“…7 It is, therefore, suggested that the formation of ␣-Si 3 N 4 above 1200 • C was mainly through a VLS mechanism with the iron oxide acting as a catalyst. 8,9 At the initial stage of nitridation Fe contacting with Si or SiC reacted to form a liquid phase of Fe-Si-O compositions. With continuous feeding of N 2 gas, N 2 dissolved in the liquid droplet to the saturated concentration level, which brought about the nucleation and growth of ␣-Si 3 N 4 from the liquid droplet.…”
Section: Optimization Of Nitridation Conditions and Reaction Mechanismsmentioning
confidence: 99%
“…The VS process is fast compared to the VLS mechanism where the chemical species must be dissolved in the liquid phase prior to an outgrowth. In the VS mechanism, high deposition rates will be obtained if the kinetics of the reaction involved are fast enough [49].…”
Section: Growth Mechanism Of the Nanowiresmentioning
confidence: 99%