1992
DOI: 10.1007/bf00728713
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Crystal growth of SiC whisker from the SiO(g)-CO system

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Cited by 62 publications
(24 citation statements)
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“…They suggested that SiC formation in their reactor follows reaction 7. Saito et al [14] in their work on crystal growth of SiC whiskers from SiO-CO system produced needle like SiC according to eq. 8:…”
Section: Sio+3co→sic+2co2mentioning
confidence: 99%
“…They suggested that SiC formation in their reactor follows reaction 7. Saito et al [14] in their work on crystal growth of SiC whiskers from SiO-CO system produced needle like SiC according to eq. 8:…”
Section: Sio+3co→sic+2co2mentioning
confidence: 99%
“…The main explanations for the growth of the SiC nanowires are the vapor-liquid-solid (VLS) and vaporsolid (VS) mechanisms [36]. In this study, no droplets were found on the tips of the nanowires.…”
Section: Formation Mechanism Of Sic Nanowiresmentioning
confidence: 54%
“…At present, however, the most commonly applied methods of production are the carbothermal reduction of silica [36] and the vapor -liquid -solid (VLS) process [37], [38].…”
Section: Silicon Carbide Whiskersmentioning
confidence: 99%
“…The overall carbothermal reaction is written as [39]: Below 1400 C most of the SiC is produced by reaction (1). At higher temperatures, however, the solid-state reaction is replaced by the gassolid reactions: Other possible reactions for SiC whisker formation are [36], [40]: The most economic and widely used production method based on carbothermal reduction of silica is the pyrolysis of silica and carbon obtained from rice hulls [41][42][43][44][45]. The Silar SC-9 whiskers (Table 1) are manufactured in this way.…”
Section: Silicon Carbide Whiskersmentioning
confidence: 99%
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