Crystal growth of La _{2/3- x} Li _{3 x} TiO ₃ by the TSFZ method

Abstract

Double-perovskite-type La2/3-xLi3xTiO3 (LLT) crystals were grown by the travelling solvent floating zone (TSFZ) method. When the floating zone (FZ) crystal growth method was applied, the La2Ti2O7 phase was deposited as an inclusion in the initial growth region. Using the TSFZ crystal growth method, however, inclusion-free LLT crystals were obtained for a 10 mol% La2Ti2O7-poor composition solvent relative to the stoichiometric LLT crystals. The molten zone was initially unstable as a result of habit plane formation during the crystal growth; however, the molten zone was stably maintained for a long period of time by decreasing the feed rate compared with the growth rate. Hence, LLT crystals of approximately 5 mmφ and 37 mm in length were obtained. The anisotropic ionic conductivity of the crystals annealed in air was σ[110]/σ[001] ≈ 3, with σ[110] = 1.64 × 10−3 S cm−1 and σ[001] = 5.26 × 10−4 S cm−1. LLT single crystals are candidates for high-performance solid-state electrolytes in all-solid-state Li ion batteries.

Traveling solvent floating zone growth and anisotropic ionic conductivity of Li<i>_x</i>La₍₁₋<i>_x</i>_)/3TaO₃ single crystals

“…The ionic conductivity along the [110] growth direction, • [110] = 2.8 © 10 ¹5 S•cm ¹1 , was higher than that along [001], • [001] = 1.8 © 10 ¹5 S•cm ¹1 , and the anisotropic parameter was 1.56. The ionic conductivities of double perovskite tetragonal single crystals of LLTiO; 19) •…”

Transient Ruddlesden–Popper-Type Defects and Their Influence on Grain Growth and Properties of Lithium Lanthanum Titanate Solid Electrolyte

“…The LA unit was coupled to a quadrupole ICP-MS instrument (Agilent 7900x, Agilent Technologies, Santa Clara, CA). Ablation parameters were as follows: laser energy density, 3.0 J cm −2 ; repetition rate, 250 Hz; beam diameter, 3 μm; dosage 10 and total acquisition time for ICP-MS acquisition was 0.04 s (with corresponding dwell times for specific nuclides: 7 Li, 15 ms; 47 Ti, 8 ms; and 139 La, 8 ms). Other parameters were based on model predictions for the fastest possible mapping times, avoidance of aliasing, minimal blur, and maximal S/N ratios.…”

A homogeneity study on (Ce,Gd)3Ga2Al3O12 crystal scintillators grown by an optical floating zone method and a traveling solvent floating zone method

“…30 The TSFZ method is equivalent to the FZ growth with a solvent by the zone-leveling effect of the zone-melting process. 32,33 It was widely used to grow incongruent-melting compounds and solid solutions, such as LaCuO 2 superconductors 34 and La 2/3−x Li 3x TiO 3 /Li x La (1−x)/3 NbO 3 solid electrolytes. 33,35 Recently, Ce-doped Gd 2 Si 2 O 7 and ZnO:Ga crystal scintillators were also successfully grown by the TSFZ method.…”

“…32,33 It was widely used to grow incongruent-melting compounds and solid solutions, such as LaCuO 2 superconductors 34 and La 2/3−x Li 3x TiO 3 /Li x La (1−x)/3 NbO 3 solid electrolytes. 33,35 Recently, Ce-doped Gd 2 Si 2 O 7 and ZnO:Ga crystal scintillators were also successfully grown by the TSFZ method. 36,37 However, the application of the TSFZ method in scintillation crystals is still comparatively rare.…”