Crystal growth of compound semiconductors with low dislocation densities

Friеdrich, J.; Kallinger, Birgit; Knoke, Isabel; Berwian, Patrick; Meissner, Η.

doi:10.1109/iciprm.2008.4702897

Cited by 1 publication

(2 citation statements)

References 35 publications

(43 reference statements)

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“…In general, grain boundaries can limit the optoelectronic properties of materials due to a high density of dangling bonds and impurity segregation caused by differences in diffusion behavior as compared to the bulk material. − Analyzing our TF-VLS p -InP via a combination of secondary ion mass spectroscopy (SIMS) and capacitance–voltage (CV) profiling revealed that only ∼10% of the incorporated Zn was electrically active in our TF-VLS p -InP, leading to the possibility that much of the interstitial Zn accumulates at the interfaces and along grain boundaries . Moreover, the bulk material quality of single crystal InP can differ from thin-film InP as well, which is caused by structural differences inherent to the growth process such as dislocations, twin boundaries, and related defects …”

Section: Introductionmentioning

confidence: 99%

“…8 Moreover, the bulk material quality of single crystal InP can differ from thin-film InP as well, which is caused by structural differences inherent to the growth process such as dislocations, twin boundaries and related defects. 13 Hydrogen in semiconductors can play an important role by modifying the electrical properties of the material. It does so by passivating native defects and impurities, or inducing electrically active defects.…”

Section: Introductionmentioning

confidence: 99%

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Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

et al. 2016

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ABSTRACT:The thin-film vapor-liquid-solid (TF-VLS) growth technique presents a promising route for high quality, scalable and cost-effective InP thin films for optoelectronic devices. Towards this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy were used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces the relative intra-gap defect density by one order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (V OC ) of individual TF-VLS InP solar cells by up to 130 mV, and reduced the variance in V OC for the analyzed devices.

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