Crystal growth of bulk ternary semiconductors: Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method

Influence of air annealing temperature and time on the optical properties of Yb:YAG single crystal grown by HDS method

“…The optimal pulling parameters by high precision program controller were found to be as follows after a series of gropes: seeding rate 1.2 mm/h, shouldering rate 1.6 mm/h and width rate 1.45 mm/h. The crystal quality strongly depends on the temperature gradient of hot zone of HDS furnace and the pulling rate [20,21]. After growth, the crystal was cooled down to 700°C at the rate of 50°C/h, and further down to room temperature at the rate of 20°C/h.…”

Thermodynamic modeling of bulk ternary alloy crystal growth: Comparison of experiments and theory for GaInSb alloys

“…The Ga 0.50 In 0.50 Sb crystal was previously compared to a crystal grown by a horizontal traveling heater method [12]. The process used here consisted of a vertical synthesis followed by horizontal growth.…”

“…The charge was lightly ground and etched with a mixture of HCl, HNO 3 and deionized water to remove oxides. Further experimental details can be found in Houchens et al [12]. The charge was placed in a new ampoule and sealed under vacuum.…”

“…The heating element was approximately 5 cm long and provided the temperature profile shown in Fig. 1, which is closely approximated with a 4th order polynomial fit [12].…”

Problems and recent advances in melt crystal growth technology

“…One can mention, for instance, the oscillatory Bridgman technique [75,76], tilting the crucible in the vertical Bridgman growth [77], traveling liquidus-zone method [78], modified horizontal traveling heater method [79], Bridgman growth with the cooling of the top melt [80], etc.…”