Crystal growth mechanisms of silicon during melt growth processes

Fujiwara, Kozo; Koizumi, Hideaki; Nozawa, Kouhei; Uda, Satoshi

doi:10.7567/ssdm.2012.h-2-1

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“…Silicon can be grown from a melt to make native substrates; 9–11 however, this is not possible for GaN at normal temperatures and pressures, and as a result, the development of GaN technology has been delayed for many years. 1,12,13 Several systems employing foreign substrates such as Si, SiC, or sapphire have been adopted to overcome this barrier.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of 1D GaN-based heterostructures on various substrates for photonic and energy applications

et al. 2023

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Section: Introductionmentioning

confidence: 99%

Epitaxial growth of 1D GaN-based heterostructures on various substrates for photonic and energy applications

et al. 2023

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show abstract

Higher quality composite silicon ingot with monocrystalline and multicrystalline bricks

Yuan

Zhang

et al. 2022

Solar Energy

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Uncovering the effects of interface-induced ordering of liquid on crystal growth using machine learning

Freitas

Reed

2020

Nat Commun

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The process of crystallization is often understood in terms of the fundamental microstructural elements of the crystallite being formed, such as surface orientation or the presence of defects. Considerably less is known about the role of the liquid structure on the kinetics of crystal growth. Here atomistic simulations and machine learning methods are employed together to demonstrate that the liquid adjacent to solid-liquid interfaces presents significant structural ordering, which effectively reduces the mobility of atoms and slows down the crystallization kinetics. Through detailed studies of silicon and copper we discover that the extent to which liquid mobility is affected by interface-induced ordering (IIO) varies greatly with the degree of ordering and nature of the adjacent interface. Physical mechanisms behind the IIO anisotropy are explained and it is demonstrated that incorporation of this effect on a physically-motivated crystal growth model enables the quantitative prediction of the growth rate temperature dependence.

show abstract

Crystal growth mechanisms of silicon during melt growth processes

Cited by 3 publications

References 11 publications

Epitaxial growth of 1D GaN-based heterostructures on various substrates for photonic and energy applications

Epitaxial growth of 1D GaN-based heterostructures on various substrates for photonic and energy applications

Higher quality composite silicon ingot with monocrystalline and multicrystalline bricks

Uncovering the effects of interface-induced ordering of liquid on crystal growth using machine learning

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