Crystal growth kinetics in GeS2 amorphous thin films

Podzemná, Veronika; Barták, Jaroslav; Málek, Jiřı́

doi:10.1007/s10973-014-3764-9

Cited by 16 publications

(18 citation statements)

References 46 publications

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“…This type of growth is indicative of typical interface‐controlled crystal growth kinetics. [ 48 ] After ≈370 s (stage III), the growth process slows down, showing a small difference on the crystal size, which is due to the depletion of the precursor in the top solution. However, the crystal size evolution of the triangular crystals displays good linearity with the square root of growth time (Figure 6b), indicating that the growth process follows a power function of

R \sim t^{1 / 2}

.…”

Section: Figurementioning

confidence: 99%

Kinetically Controlled Growth of Sub‐Millimeter 2D Cs₂SnI₆ Nanosheets at the Liquid–Liquid Interface

Zhu

Shen

et al. 2020

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Cs2SnI6 perovskite displays excellent air stability and a high absorption coefficient, promising for photovoltaic and optoelectronic applications. However, Cs2SnI6‐based device performance is still low as a result of lacking optimized synthesis approaches to obtain high quality Cs2SnI6 crystals. Here, a new simple method to synthesize single crystalline Cs2SnI6 perovskite at a liquid–liquid interface is reported. By controlling solvent conditions and Cs2SnI6 supersaturation at the liquid–liquid interface, Cs2SnI6 crystals can be obtained from 3D to 2D growth with controlled geometries such as octahedron, pyramid, hexagon, and triangular nanosheets. The formation mechanisms and kinetics of complex shapes/geometries of high quality Cs2SnI6 crystals are investigated. Freestanding single crystalline 2D nanosheets can be fabricated as thin as 25 nm, and the lateral size can be controlled up to sub‐millimeter regime. Electronic property of the high quality Cs2SnI6 2D nanosheets is also characterized, featuring a n‐type conduction with a high carrier mobility of 35 cm2 V−1 s−1. The interfacial reaction‐controlled synthesis of high‐quality crystals and mechanistic understanding of the crystal growth allow to realize rational design of materials, and the manipulation of crystal growth can be beneficial to achieve desired properties for potential functional applications.

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R \sim t^{1 / 2}

.…”

Section: Figurementioning

confidence: 99%

Kinetically Controlled Growth of Sub‐Millimeter 2D Cs₂SnI₆ Nanosheets at the Liquid–Liquid Interface

Zhu

Shen

et al. 2020

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“…The standard growth models are based on an assumption, that the own transport of the structural units to the liquid-crystal interface is driven by self-diffusion, which can be substituted by inverse viscosity according to the Stokes-Einstein-Eyring relation [49]. Nevertheless, in recent studies on crystal growth [13,37,38,48,[50][51][52][53][54] a significant decoupling of crystal growth rate and viscosity occurred, therefore, the standard crystal growth models were corrected to the decoupling phenomenon by including the decoupling parameter  into the standard crystal growth models (Eq. 5).…”

Section: Crystal Growth Kineticsmentioning

confidence: 99%

Analysis of crystal growth and viscosity in Ge-Sb-Se-Te undercooled melts

Barták

Košťál

Málek

2019

Journal of Non-Crystalline Solids

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A comprehensive analysis on crystal growth and viscosity is presented for the Ge2Sb2Se5-xTex (x = 0.5 and 1) undercooled melts in this article. Temperature dependence of the measured viscosities (10 7.5 -10 12.5 Pa•s) can be described by a simple exponential Arrhenius type equation in the relatively narrow temperature region in which the measurements were performed. Fragility of the measured materials are all roughly equal to 43, which means that these materials belong to the so called "intermediate" liquids (lying in the middle between strong and fragile liquids) and cannot be described by simple Arrhenius type equation if the temperature region is expanded from glass transition to melting, which is important for description of crystal growth. Therefore, MYEGA equation is used to extrapolate the viscosity data into the temperature region of studied crystal growth. Nucleation and crystal growth started on a surface of studied samples. The isothermal growth rate of the formed surface crystalline layer was measured at various temperatures. Analysis of the growth data revealed a crystal growth driven by liquid-crystal interface kinetics. Therefore, the standard crystal growth models were used for description of crystal growth rates in the studied systems.

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“…Therefore, quantitative determination of crystal nucleation, growth kinetics, and macroscopic crystallization rates from a single set of measurements can be obtained with improvement in lower limits of detection and greater linear dynamic range . Podzemná et al were able to demonstrate real-time imaging when measuring crystal growth kinetics and nucleation kinetic rates of germanium disulfide . Overall, SHG would serve as a sensitive and selective tool for detection and characterization of both surface and bulk materials …”

Section: Introductionmentioning

confidence: 99%

“…were able to demonstrate real-time imaging when measuring crystal growth kinetics and nucleation kinetic rates of germanium disulfide. 29 Overall, SHG would serve as a sensitive and selective tool for detection and characterization of both surface and bulk materials. 1 In this work, SHG microscopy was performed within the bulk and at the surface of seeded ritonavir crystals in copovidone for high-contrast quantitative analysis of crystallization kinetics.…”

Section: ■ Introductionmentioning

confidence: 99%

Disparities of Single-Particle Growth Rates in Buried Versus Exposed Ritonavir Crystals within Amorphous Solid Dispersions

et al. 2020

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Seeded growth rates of ritonavir in copovidone at 75% relative humidity (RH) and 50 °C were evaluated by single-particle tracking second harmonic generation (SHG) microscopy and found to be ∼3-fold slower for crystallites at the surface compared to the bulk. The shelf lives of final dosage forms containing amorphous solid dispersions (ASDs) are often dictated by the rates of active pharmaceutical ingredient crystallization. Upon exposure to elevated RH, the higher anticipated water content near the surfaces of ASDs has the potential to substantially impact nucleation and growth kinetics relative to the bulk. However, quantitative assessment of these differences in growth rates is complicated by challenges associated with discrimination of the two contributions (supersaturation and molecular mobility) in ensemble-averaged measurements. In the present study, "sandwich" materials were prepared, in which sparse populations of ritonavir single-crystalline seeds were pressed between two similar ASD films to assess bulk crystallization rates. These sandwich materials were compared and contrasted with analogously prepared "open-faced" samples, without the capping film, to assess the surface crystallization rates. Single-particle analysis by SHG microscopy time-series during in situ crystallization produced average growth rates of 3.8 μm/h for bulk columnar crystals with a particle-to-particle standard deviation of 0.9 μm/h. In addition, columnar crystal growth rates for surface particles were measured to be 1.3 μm/h and radiating crystal growth rates for surface particles were measured to be 1.0 μm/h, both with a particle-to-particle deviation of 0.4 μm/h. The observed appearance of radiating crystals upon surface seeding is attributed to reduced ritonavir solubility upon water adsorption at the interface, leading to higher defect densities in crystal growth. Despite substantial differences in crystal habit, correction of the surface growth rates by a factor of 4 from geometric effects resulted in relatively minor but statistically significant differences in the growth kinetics for the two local environments. These results are consistent, with viscosity being a relatively weak function of water absorption coupled with primarily diffusion-limited growth kinetics.

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Crystal growth kinetics in GeS2 amorphous thin films

Cited by 16 publications

References 46 publications

Kinetically Controlled Growth of Sub‐Millimeter 2D Cs₂SnI₆ Nanosheets at the Liquid–Liquid Interface

Kinetically Controlled Growth of Sub‐Millimeter 2D Cs₂SnI₆ Nanosheets at the Liquid–Liquid Interface

Analysis of crystal growth and viscosity in Ge-Sb-Se-Te undercooled melts

Disparities of Single-Particle Growth Rates in Buried Versus Exposed Ritonavir Crystals within Amorphous Solid Dispersions

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Crystal growth kinetics in GeS2 amorphous thin films

Cited by 16 publications

References 46 publications

Kinetically Controlled Growth of Sub‐Millimeter 2D Cs2SnI6 Nanosheets at the Liquid–Liquid Interface

Kinetically Controlled Growth of Sub‐Millimeter 2D Cs2SnI6 Nanosheets at the Liquid–Liquid Interface

Analysis of crystal growth and viscosity in Ge-Sb-Se-Te undercooled melts

Disparities of Single-Particle Growth Rates in Buried Versus Exposed Ritonavir Crystals within Amorphous Solid Dispersions

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Product

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Kinetically Controlled Growth of Sub‐Millimeter 2D Cs₂SnI₆ Nanosheets at the Liquid–Liquid Interface

Kinetically Controlled Growth of Sub‐Millimeter 2D Cs₂SnI₆ Nanosheets at the Liquid–Liquid Interface