2015
DOI: 10.1016/j.jnoncrysol.2014.11.017
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Crystal growth in (GeS 2 ) x (Sb 2 S 3 ) 1−x thin films

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Cited by 10 publications
(17 citation statements)
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“…Coming back to the proposed 2D surface nucleated growth model, it was found that the screw dislocation growth model describes the growth rate data better. Nevertheless, the 2D surface nucleated growth model is very often used for description of crystal growth in oxide , and chalcogenide , glasses, especially in the sulfur-analogue Ge–Sb–S system. , According to Figure , the calculated 2D surface nucleated growth model is close to the experimental data; therefore, analysis of the calculated parameters of this model in the presented Ge 2 Sb 2 Se 5 material could provide useful information, especially in comparison to that from other systems.…”
Section: Discussionmentioning
confidence: 56%
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“…Coming back to the proposed 2D surface nucleated growth model, it was found that the screw dislocation growth model describes the growth rate data better. Nevertheless, the 2D surface nucleated growth model is very often used for description of crystal growth in oxide , and chalcogenide , glasses, especially in the sulfur-analogue Ge–Sb–S system. , According to Figure , the calculated 2D surface nucleated growth model is close to the experimental data; therefore, analysis of the calculated parameters of this model in the presented Ge 2 Sb 2 Se 5 material could provide useful information, especially in comparison to that from other systems.…”
Section: Discussionmentioning
confidence: 56%
“…This is valid for small amounts of undercooling, where the amorphous-to-crystalline kinetic process is assumed to be similar to that governing self-diffusion, and the diffusion constant can be described by the inverse shear viscosity . Nevertheless, several authors showed that viscosity and crystal growth rate can decouple with increasing undercooling. The decoupling can be caused by breakdown of the Stokes–Einstein relationship between diffusivity and viscosity.…”
Section: Crystal Growth Theorymentioning
confidence: 99%
“…30°C, both studied (GeS 2 ) y (Sb 2 S 3 ) 1 − y glasses can be considered as stable. However, Barták et al [51] directly observed crystallization of Sb 2 S 3 in (GeS 2 ) y (Sb 2 S 3 ) 1 − y thin films in the temperature range ca. 260-350°C and showed that the crystal growth rate at selected temperature is higher for y = 0.2 composition than for y = 0.3.…”
Section: Resultsmentioning
confidence: 99%
“…The standard growth models are based on an assumption, that the own transport of the structural units to the liquid-crystal interface is driven by self-diffusion, which can be substituted by inverse viscosity according to the Stokes-Einstein-Eyring relation [49]. Nevertheless, in recent studies on crystal growth [13,37,38,48,[50][51][52][53][54] a significant decoupling of crystal growth rate and viscosity occurred, therefore, the standard crystal growth models were corrected to the decoupling phenomenon by including the decoupling parameter  into the standard crystal growth models (Eq. 5).…”
Section: Crystal Growth Kineticsmentioning
confidence: 99%