Crystal growth, fabrication and evaluation of cadmium manganese telluride gamma ray detectors

Bürger, A.; Chattopadhyay, K.; Chen, Henry; Ndap, Jean Olivier; Ma, Xiaoyan; Trivedi, Sudhir; Kutcher, Susan; Chen, Rujin; Rosemeier, R. D.

doi:10.1016/s0022-0248(98)01171-3

Cited by 74 publications

(46 citation statements)

References 9 publications

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“…A very recent and promising candidate is cadmium manganese telluride (CMT) [3]. Its distinct advantages of good compositional homogeneity and a highly tunable band gap compared to CdZnTe have encouraged CMT detector developments in recent years, bringing large improvements in the performance of CMT as a high resistivity single crystal radiation detector [4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Charge transport properties of CdMnTe radiation detectors

Rafiei

Boardman

Reinhard

et al. 2012

EPJ Web of Conferences

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Abstract. Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe) radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading charge collection is reduced with increasing values of bias voltage. The electron drift velocity was calculated from the rise time distribution of the preamplifier output pulses at each measured bias. From the dependence of drift velocity on applied electric field the electron mobility was found to be µ n = (718 ± 55) cm 2 /Vs at room temperature.

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Section: Introductionmentioning

confidence: 99%

Charge transport properties of CdMnTe radiation detectors

Rafiei

Boardman

Reinhard

et al. 2012

EPJ Web of Conferences

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“…Although the physical properties of CdMnTe (CMT) and CdZnTe (CZT) are very similar, CMT crystals show poorer performance as X-ray and gamma detectors; furthermore, controlling their electrical properties was very difficult due to the high concentrations of residual impurities arising from the impure starting materials [1,2]. Despite these drawbacks, one important difference favoring the usage of CMT rather than CZT is the fact that segregation coefficient of Mn in the CdTe host is close to 1, thereby ensuring a uniform alloy composition within largevolume ingots.…”

Section: Introductionmentioning

confidence: 99%

“…Despite these drawbacks, one important difference favoring the usage of CMT rather than CZT is the fact that segregation coefficient of Mn in the CdTe host is close to 1, thereby ensuring a uniform alloy composition within largevolume ingots. Reportedly, cadmium vacancies in CdTe-based semiconductors are successfully compensated by doping with indium, chlorine, or aluminum [1,2].…”

Section: Introductionmentioning

confidence: 99%

Improvement of CdMnTe Detector Performance by MnTe Purification

et al. 2011

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Residual impurities in manganese (Mn) are a big obstacle to obtaining high-performance CdMnTe (CMT) X-ray and gamma-ray detectors. Generally, the zone-refining method is an effective way to improve the material's purity. In this work, we purified the MnTe compounds combining the zone-refining method with molten Te, which has a very high solubility for most impurities. We confirmed the improved purity of the material by glow-discharge mass spectrometry (GDMS). We also found that CMT crystals from a multiply-refined MnTe source, grown by the vertical Bridgman method, yielded better performing detectors.

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“…Owing to its unique magnetic and magnetooptic properties [1], Cd 1−x Mn x Te crystals can be used in many device applications [2] and offer several potential advantages over Cd 1−x Zn x Te as a material for room-temperature X-and gamma-ray detectors [3,4]. The band gap range 1.7 eV to 2.2 eV, required for substantiating an "ideal" radiation detector performance, can be realized with a relatively low (< 50%) amount of Mn compared with that of Zn in Cd 1−x Zn x Te (up to 70%) [4].…”

Section: Introductionmentioning

confidence: 99%

Self-Compensation Mechanism in Semi-Insulating CdMnTe Crystals Intended for X/γ-Ray Detectors

Yurtsenyuk¹,

Kosyachenko²,

Sklyarchuk³

et al. 2011

Acta Phys. Pol. A

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The electrical properties of single Cd 1−x Mn x Te (x = 0.07-0.39) crystals with a resistivity of ≈ 108 Ω cm at 300 K have been studied. The electrical conductivity is explained in the terms of statistics of electrons and holes in a semiconductor taking into account the compensation process in impurity-defect complexes. The energy of ionization and the degree of compensation levels have been found.

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Crystal growth, fabrication and evaluation of cadmium manganese telluride gamma ray detectors

Cited by 74 publications

References 9 publications

Charge transport properties of CdMnTe radiation detectors

Charge transport properties of CdMnTe radiation detectors

Improvement of CdMnTe Detector Performance by MnTe Purification

Self-Compensation Mechanism in Semi-Insulating CdMnTe Crystals Intended for X/γ-Ray Detectors

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