Crystal Growth, Dielectric and Polarization Reversal Properties of Bi₄Ti₃O₁₂ Single Crystal

Abstract

A Bi2O3-TiO2 phase diagram was determined using differential thermal analysis (DTA) apparatus. Bi4Ti3O12 (BIT) micalike single crystals grown by a flux method were clear and slightly grayish in color. Ferroelectric and dielectric properties of BIT crystals were observed from measurements of electric displacement vs electric field hysteresis loops and the dielectric constant. Also, the polarization switching characteristics of BIT crystals were investigated. The switching time and switching current density were read from the transient waveforms.

Perfect Bi4Ti3O12 Single‐Crystal Films via Flux‐Mediated Epitaxy

“…It is not sufficient to examine the well-known fluxes predicted from the bulk phase diagrams, because thin-film growth conditions are definitely different from those of the bulk process. In fact, the volatile Bi 2 O 3 self-flux of Bi 4 Ti 3 O 12 , which is predicted from the phase diagram of Bi 2 O 3 and TiO 2 , [20,21] proved to be useless for the present purposes. From the secondary-ion mass spectroscopy (SIMS) measurements, a high deficiency of Bi was observed, resulting in high leakage-current densities, in the range of 10 -3 -10 -4 A cm -2 .…”

“…[23][24][25][26][27] In order to screen the flux materials, ternary composition spread libraries were fabricated by use of a combinatorial pulsed-laser deposition (PLD) system. [25] We designed flux libraries including a Bi 4+x Ti 3-x O d (0 < x < 3) self-flux [20,21] 12 ) q (BiO y ) r library, where M = V, W, Cu, Mo, BiP, or Ba, p + q + r = 1, and 0 ≤ p, q, r ≤ 1. This ternary composition spread film was deposited directly on the substrate, and the Bi 4 Ti 3 O 12 film was subsequently deposited at a temperature that was expected to melt the flux.…”

Relaxor behavior of PbxBi4Ti3+xO12+3x (x=2,3) Aurivillius ceramics

“…Below the transition, a strong BiuO bond is formed to the apex oxygen of the perovskite layer, tilting the octahedra, and producing antiparallel shifts along the b axis. The spontaneous polarization 3 in the ab plane is ϳ50 C/cm 2 and in the perpendicular direction is only 4 C/cm 2 . The continuous extension of OuTiuO chains along the c axis is interrupted by both the presence of (Bi 2 O 2 ) 2ϩ layers and the translation of the BO 6 octahedra in the plane perpendicular to the c axis.…”

Synthesis, phase transformation and dielectric properties of sol–gel derived Bi2Ti2O7 ceramics

“…The materials are useful in the following applications: actuators, capacitors, non-volatile memory devices [1], microwave filters [2], etc. Depending on the chemical compositions and processing conditions, many different phases of bismuth titanate [3][4][5] were formed such as Bi 24 (B2T4).…”