Crystal growth and structure determination of silicon telluride Si2Te3

Ploog, K.; Stetter, W.; Nowitzki, A.; Schönherr, E.

doi:10.1016/0025-5408(76)90014-3

Cited by 66 publications

(52 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…X-ray and electron diffraction data on bulk Si 2 Te 3 suggest that a quarter of the dimers are vertical, while the other three quarters of the dimers are oriented horizontally with a random choice of 0°, 30°, or 60° angle. 12,13 Recent progress in developing techniques of isolating single-layer structures, e.g., laser thinning of Experimentally, it has been observed that the Si 2 Te 3 nanostructures exhibit a reversible change of color from red to black upon heating to 210 °C, 11 suggesting a reduction of the band gap.…”

mentioning

confidence: 99%

“…12,13 Both methods conclude that the Si 2 Te 3 has a layered structure, where each 12 We have performed calculations using DFT with the local-density approximation for the exchangecorrelation potential, PAW potentials, 15 and plane-wave basis as implemented in the VASP code. 16,17 Supercells including 20, 40 and 80 atoms with different Si dimer orientation, as observed in x-ray and electron diffraction experiments 12,13 , were used in the calculations. A 10×10×10 k-point grid was employed for the Brillouin zone integrations for structural optimization and, subsequently, the band structure was calculated for high-symmetry directions.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Variability of structural and electronic properties of bulk and monolayer Si2Te3

Shen

Puzyrev

Combs

et al. 2016

Applied Physics Letters

View full text Add to dashboard Cite

Since the emergence of monolayer graphene as a promising two-dimensional material, many other monolayer and few-layer materials have been investigated extensively. An experimental study of few-layer Si 2 Te 3 was recently reported, showing that the material has diverse properties for potential applications in Si-based devices ranging from fully integrated thermoelectrics to optoelectronics to chemical sensors. This material has a unique layered structure: it has a hexagonal closed-packed Te sublattice, with Si dimers occupying octahedral intercalation sites.Here we report a theoretical study of this material in both bulk and monolayer form, unveiling a fascinating array of diverse properties arising from reorientations of the silicon dimers between planes of Te atoms. The lattice constant varies up to 5% and the band gap varies up to 40% depending on dimer orientations. The monolayer band gap is 0.4 eV larger than the bulk-phase value for the lowest-energy configuration of Si dimers. These properties are, in principle, controllable by temperature and strain, making Si 2 T 3 a promising candidate material for nanoscale mechanical, optical, and memristive devices.

show abstract

mentioning

confidence: 99%

mentioning

confidence: 99%

Variability of structural and electronic properties of bulk and monolayer Si2Te3

Shen

Puzyrev

Combs

et al. 2016

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…Поэтому в качестве подложки часто используется кремний (Si). Во многих случаях пленка CdTe на Si растет поликри-сталлической [3][4][5], кроме того, при химическом осажде-нии CdTe некоторые прекурсоры вступают в реакцию с подложкой кремния с образованием фазы Si 2 Te 3 [7], что существенно ухудшает качество CdTe. Карбид кремния (SiC) является гораздо более химически стойким, чем Si, и практически не вступает в реакцию с элемента-ми шестой группы.…”

Section: Introductionunclassified

Эпитаксиальный Рост Пленок Теллурида Кадмия На Кремнии С Буферным Слоем Карбида Кремния

Антипов¹,

Кукушкин²,

Осипов³

2017

Физика Твердого Тела

View full text Add to dashboard Cite

Впервые выращен эпитаксиальный теллурид кадмия толщиной 1−3 µm на кремнии с буферным слоем карбида кремния методом открытого термического испарения и конденсации в вакууме. Оптимальная температура подложки составила 500• C при температуре испарителя 580• C, время роста 4 s. Для более качественного роста теллурида кадмия на поверхности кремния предварительно был синтезирован методом топохимического замещения атомов высококачественный буферный слой карбида кремния толщиной ∼ 100 nm. Эллипсометрический, рамановский, рентгеновский и электронографический анализ показали высокое структурное совершенство слоя CdTe и отсутствие поликристаллической фазы.Работа выполнена при финансовой поддержке Российского научного фонда (грант № 14-12-01102).Исследования проводились при использовании оборудования Уникальной научной установки (УНО) " Физика, химия и механика кристаллов и тонких пленок" ФГУН ИПМаш РАН.

show abstract

“…Based on EXAFS results [8], showing that the bulk glass is chemically ordered, we use a crystalline model, shown in Figure 2 ,taken from Si 2 Te 3 [9]. We used both periodic supercells and a finite cluster to study this system.…”

Section: Theorymentioning

confidence: 99%

Electron Self-trapping in Ge₂ Se₃ and its Role in Ag and Sn Incorporation

2012

View full text Add to dashboard Cite

We present a set of density functional theory (DFT) calculations on the electronic structure of Ag and Sn in Ge 2 Se 3 in a periodic model. We show that electron self-trapping is a persistent feature in the presence of many defects. Ag and Sn autoionize upon entering Ge 2 Se 3 becoming Ag + and Sn 2+, respectively, and the freed electrons self trap at the lowest energy site. Both Ag and Sn can substitute for Ge, and we present formation energies as a function of Fermi level that show that Sn can substantially alter the incorporation of Ag into the Ge 2 Se 3 network.

show abstract

Crystal growth and structure determination of silicon telluride Si2Te3

Cited by 66 publications

References 8 publications

Variability of structural and electronic properties of bulk and monolayer Si2Te3

Variability of structural and electronic properties of bulk and monolayer Si2Te3

Эпитаксиальный Рост Пленок Теллурида Кадмия На Кремнии С Буферным Слоем Карбида Кремния

Electron Self-trapping in Ge₂ Se₃ and its Role in Ag and Sn Incorporation

Contact Info

Product

Resources

About

Crystal growth and structure determination of silicon telluride Si2Te3

Cited by 66 publications

References 8 publications

Variability of structural and electronic properties of bulk and monolayer Si2Te3

Variability of structural and electronic properties of bulk and monolayer Si2Te3

Эпитаксиальный Рост Пленок Теллурида Кадмия На Кремнии С Буферным Слоем Карбида Кремния

Electron Self-trapping in Ge2 Se3 and its Role in Ag and Sn Incorporation

Contact Info

Product

Resources

About

Electron Self-trapping in Ge₂ Se₃ and its Role in Ag and Sn Incorporation