Crystal growth and sticking coefficient of Bi2Te3 thin films on Si(1 1 1) substrate

Room-temperature MBE deposition, thermoelectric properties, and advanced structural characterization of binary Bi2Te3 and Sb2Te3 thin films

“…However, stoichiometry control is rather difficult due to the small sticking coefficient of tellurium at high substrate temperatures and the strong temperature dependence of the sticking coefficient. A sticking coefficient K S (Te) = 0.6 was obtained for T S = 310 • C and F R = 2 [14]. As an alternative approach, room-temperature MBE together with a subsequent annealing step was found as a promising route [15,17] to obtain thin films with controlled stoichiometry as demonstrated in this work ( Table 2).…”

Room temperature MBE deposition of Bi2Te3 and Sb2Te3 thin films with low charge carrier densities

“…The sticking coefficient of Te is significantly reduced to values smaller than 1 for substrate temperatures of about 300 °C as applied for epitaxial MBE 7. In this work, binary thin films of Sb 2 Te 3 and Bi 2 Te 3 were grown by MBE with a growth concept developed to overcome the problem of stoichiometry control.…”

Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition

“…High-quality Bi 2 Te 3 crystals can be grown by the commonly used Bridgeman technique, 4,5,13 however, many applications (e.g., on-chip electronics) desire large scale thin films. Various deposition techniques, such as sputtering, 14 evaporation, 15-17 electrochemical deposition, 18 metal organic chemical vapor deposition (MOCVD), [19][20][21] and molecular beam epitaxy (MBE), [22][23][24][25][26] have been developed to grow continuous Bi 2 Te 3 films on different substrates. Films grown by sputtering, evaporation, and electrochemical deposition, offer room temperature (300 K) carrier mobility that are typically at least 1 order of magnitude lower than that of bulk crystals ($300 to 600 cm 2 /Vs), 13,24,27 and SS have yet to be observed.…”