Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

Abstract

Recent development of technology and understanding of the growth mechanism in heteroepitaxial growth of nitrides on highly-mismatched substrates have enabled us to grow high-quality GaN, AlGaN, GaInN and their quantum well structures. Conductivity control of both n-type and p-type nitrides has also been achieved. These achievements have led to the commercialization of high-brightness blue, green and white light-emitting diodes and to the realization of short wavelength laser diodes and high-speed transistors based on nitrides. The performance of these devices is still progressing, but still requires advances in many areas of materials science and device fabrication.

Violet to deep-ultraviolet InGaN∕GaN and GaN∕AlGaN quantum structures for UV electroabsorption modulators

“…This considerably high resistance is due to the insufficient conductivity of p-type AlGaN layer. 13 This resistance level is one of the issues that reduce the performance of the QEM-1 structure. Given their mesa size of 10ϫ 10 m 2 , their corresponding device capacitance is ϳ0.15-0.3 pF, corresponding to RC time constants of ϳ90 ps for QEM-1 and ϳ25 ps for QEM-2, -3, and -4, respectively.…”

“…[10][11][12] AlGaN based quantum structures, however, exhibit technical difficulties such as relatively slow growth rates, high dislocation densities of Al, and insufficient conductivity of doped layers. 13 In this work, to this end, we demonstrate four different quantum electroabsorption modulators with their operating wavelengths spanning from 400 to 270 nm by using InGaN and AlGaN based quantum structures in their active region as required for operating in visible to near-UV and deep-UV spectral ranges, respectively. Based on our proof-of-concept demonstrations here, such UV electroabsorption quantum structures hold great promise for use in future high-speed NLOS communication applications.…”

On the ammonolysis of Ga2O3: An XRD, neutron diffraction and XAS investigation of the oxygen-rich part of the system Ga2O3–GaN

“…Recent developments have shown increased interest in gallium oxide and gallium nitride compounds as base materials for (opto-) electronic components such as light emitting diodes or sensors [1][2][3][4][5]. While there have been extensive efforts in researching the binary compounds b-Ga 2 O 3 and GaN, there is only a smaller number of reports on gallium oxynitrides, that are intermediate compounds in the pseudo-binary system GaN-Ga 2 O 3 .…”

Synthesis of blue-shifted luminescent colloidal GaN nanocrystals through femtosecond pulsed laser ablation in organic solution

“…For the last two decades, III-N-based semiconductors with their wide, direct, and tunable band gap from IR to UV regions (0.7-6.2 eV), their ternary and quaternary alloys have attracted much attention for optoelectronic devices (Akasaki and Amano 1997;Kazlauskas et al 2003;Dong et al 2014). GaN-based materials having a high strength to high power, high temperature, high frequency are suitable candidates for devices in harsh environments (Son et al 2010).…”